S
Srinivas D. Nemani
Researcher at Applied Materials
Publications - 209
Citations - 6316
Srinivas D. Nemani is an academic researcher from Applied Materials. The author has contributed to research in topics: Layer (electronics) & Dielectric. The author has an hindex of 42, co-authored 205 publications receiving 6292 citations. Previous affiliations of Srinivas D. Nemani include Wilmington University.
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Patent
A method for depositing and curing low-k films for gapfill and conformal film applications
TL;DR: In this article, the authors described methods of making a silicon oxide layer on a substrate, which may include forming the silicon oxide on the substrate in a reaction chamber by reacting an atomic oxygen precursor and a silicon precursor.
Patent
Method and system for improving dielectric film quality for void free gap fill
Abhijit Basu Mallick,Jeffrey C. Munro,Linlin Wang,Srinivas D. Nemani,Yi Zheng,Zheng Yuan,Dimitry Lubomirsky,Ellie Yieh +7 more
TL;DR: In this article, the authors proposed a method of forming a silicon oxide layer on a substrate by providing a substrate and forming an oxide layer overlying at least a portion of the substrate including residual water, hydroxyl groups, and carbon species.
Patent
High quality silicon oxide films by remote plasma cvd from disilane precursors
TL;DR: In this paper, a method of depositing a silicon and nitrogen containing film on a substrate was proposed, where the radical nitrogen and silicon-containing precursors react and deposit the silicon-and nitrogen-containing film on the substrate.
Patent
Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound
Farhad Moghadam,David Cheung,Ellie Yieh,Li-Qun Xia,Wai-Fan Yau,Chi-I Lang,Shin-Puu Jeng,Frederic Gaillard,Shankar Venkataraman,Srinivas D. Nemani +9 more
TL;DR: In this article, a method for depositing silicon oxide layers having a low dielectric constant by reaction of an organosilicon compound and a hydroxyl forming compound at a substrate temperature less than about 400° C.