Y
Yi Zheng
Researcher at Applied Materials
Publications - 31
Citations - 1109
Yi Zheng is an academic researcher from Applied Materials. The author has contributed to research in topics: Layer (electronics) & Dielectric. The author has an hindex of 14, co-authored 31 publications receiving 1108 citations.
Papers
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Patent
Method and system for improving dielectric film quality for void free gap fill
Abhijit Basu Mallick,Jeffrey C. Munro,Linlin Wang,Srinivas D. Nemani,Yi Zheng,Zheng Yuan,Dimitry Lubomirsky,Ellie Yieh +7 more
TL;DR: In this article, the authors proposed a method of forming a silicon oxide layer on a substrate by providing a substrate and forming an oxide layer overlying at least a portion of the substrate including residual water, hydroxyl groups, and carbon species.
Patent
Method of depositing dielectric materials in damascene applications
Ju-hyung Lee,Ping Xu,Shankar Venkataraman,Li-Qun Xia,Fei Han,Ellie Yieh,Srinivas D. Nemani,Kangsub Yim,Farhad Moghadam,Ashok Sinha,Yi Zheng +10 more
TL;DR: In this paper, a method for depositing an oxygen-doped dielectric layer may be used for a barrier layer or a hardmask, which is used as a barrier in damascene or dual damascenes applications.
Patent
Two-layer film for next generation damascene barrier application with good oxidation resistance
TL;DR: In this article, a method for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in Damascene or dual damascene applications with low k dielectric materials.
Patent
Method for forming ultra low k films using electron beam
TL;DR: In this paper, a method for depositing a low dielectric constant film using an e-beam treatment is described, which is based on a gas mixture of organosilicon compounds and one or more hydrocarbon compounds having at least one cyclic group.
Patent
Remote hydrogen plasma source of silicon containing film deposition
Zheng Yuan,Mandar B. Pandit,Francimar Schmitt,Yi Zheng,Fan Yang,Lipan Li,Alan Tso,Dustin W. Ho,Tom K. Cho,Randhir Thakur +9 more
TL;DR: In this paper, a method for forming a silicon containing layer on a substrate includes providing a substrate into a processing chamber, providing a hydrogen containing gas from a remote plasma source coupled to the processing chamber and applying a RF power less than 17.5 mWatt/cm 2 to the process chamber.