Showing papers by "Stefan E. Schulz published in 2004"

TL;DR: In this article, the impact of different ULK material pore size (3 and 7 nm) on TiN diffusion barrier integrity was investigated for patterned structures by etch dip test and analytical methods.

TL;DR: In this paper, an aerogel as ultra low k (ULK) dielectric was used to increase the adhesive strength between the dielectrics aerogels and the cap layer material PECVD silicon nitride and a ULK compatible CMP process was developed.

TL;DR: In this article, the patterning of porous SiO"2 aerogel as ultra low k dielectric has been investigated and three different concepts were examined to etch this material without damage and to finally integrate it into a copper damascene metallization.

TL;DR: In this article, the electronic and ionic contributions to the static dielectric constant of the xerogel films were calculated from the refractive index in the visible range and from infrared transmission spectra, respectively.