S
Stephan Senz
Researcher at Korea Research Institute of Standards and Science
Publications - 4
Citations - 531
Stephan Senz is an academic researcher from Korea Research Institute of Standards and Science. The author has contributed to research in topics: Substrate (electronics) & Isotropic etching. The author has an hindex of 4, co-authored 4 publications receiving 513 citations.
Papers
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Journal ArticleDOI
Extended arrays of vertically aligned sub-10 nm diameter [100] Si nanowires by metal-assisted chemical etching.
Zhipeng Huang,Xuanxiong Zhang,Manfred Dr. Reiche,Lifeng Liu,Woo Lee,Tomohiro Shimizu,Stephan Senz,Ulrich Gösele +7 more
TL;DR: Large-area high density silicon nanowire arrays were fabricated by metal-assisted chemical etching of silicon, utilizing anodic aluminum oxide (AAO) as a patterning mask of a thin metallic film on a Si (100) substrate.
Journal ArticleDOI
Ordered arrays of vertically aligned [110] silicon nanowires by suppressing the crystallographically preferred etching directions.
Zhipeng Huang,Tomohiro Shimizu,Stephan Senz,Zhang Zhang,Xuanxiong Zhang,Woo Lee,Nadine Geyer,Ulrich Gösele +7 more
TL;DR: A generic method was developed for the fabrication of wafer-scale vertically aligned arrays of epitaxial [110] Si nanowires on a Si(110) substrate based on an ultrathin porous anodic alumina mask, while a prepatterning of the substrate prior to the metal depostion is not necessary.
Patent
Non-c-axis oriented bismuth-layered perovskite ferroelectric structure epitaxially grown on buffered silicon
TL;DR: In this paper, a structure containing a ferroelectric material comprises a substrate such as silicon, a buffer layer formed on the substrate, and a non-c-axis oriented, electrically-conductive template layer consisting of a perovskite oxide compound.
Patent
Thermoelectric apparatus and methods of manufacturing the same
TL;DR: A thermoelectric apparatus comprises at least one pair of adjacent portions of p-type and n-type semiconductor material each portion having respective, generally oppositely disposed, first and second surface regions as mentioned in this paper.