S
Subhamoy Ghatak
Researcher at Tata Institute of Fundamental Research
Publications - 18
Citations - 2125
Subhamoy Ghatak is an academic researcher from Tata Institute of Fundamental Research. The author has contributed to research in topics: Field-effect transistor & Electron mobility. The author has an hindex of 11, co-authored 17 publications receiving 1962 citations. Previous affiliations of Subhamoy Ghatak include Indian Institute of Science & Osaka University.
Papers
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Nature of electronic states in atomically thin MoS₂ field-effect transistors.
TL;DR: It is suggested that Coulomb potential from trapped charges in the substrate is the dominant source of disorder in MoS(2) field-effect devices, which leads to carrier localization, as well, in low-temperature electrical transport experiments.
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The Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors
TL;DR: In this paper, the authors present low temperature electrical transport experiments in five field effect transistor devices consisting of monolayer, bilayer and trilayer MoS2 films, mechanically exfoliated onto Si/SiO2 substrate.
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Microscopic mechanism of 1/f noise in graphene: role of energy band dispersion.
Atindra Nath Pal,Subhamoy Ghatak,Vidya Kochat,E. S. Sneha,Arjun Sampathkumar,Srinivasan Raghavan,Arindam Ghosh +6 more
TL;DR: It is shown that the flicker noise, or the 1/f noise, in electrical resistance is a sensitive and robust probe to the band structure of graphene.
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Observation of trap-assisted space charge limited conductivity in short channel MoS2 transistor
Subhamoy Ghatak,Arindam Ghosh +1 more
TL;DR: In this paper, temperature dependent I-V measurements of short channel MoS2 field effect devices at high source-drain bias were presented, and the existence of an exponential distribution of trap states was observed.
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Trap-assisted space charge limited transport in short channel MoS2 transistor
Subhamoy Ghatak,Arindam Ghosh +1 more
TL;DR: In this paper, temperature dependent measurements of short channel MoS$_2$ field effect devices at high source-drain bias were presented, and the existence of an exponential distribution of trap states was observed.