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Sudhansu Sekhar Das

Researcher at Tel Aviv University

Publications -  9
Citations -  38

Sudhansu Sekhar Das is an academic researcher from Tel Aviv University. The author has contributed to research in topics: Coercivity & Engineering. The author has an hindex of 2, co-authored 5 publications receiving 19 citations. Previous affiliations of Sudhansu Sekhar Das include National Institute of Science Education and Research.

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Detection of hydrogen by the extraordinary Hall effect in CoPd alloys

TL;DR: In this article, the effect of hydrogen adsorption on the extraordinary Hall phenomenon (EHE) in ferromagnetic CoPd films is studied as a function of composition, thickness, substrate, and hydrogen concentration in the atmosphere.
Journal ArticleDOI

Detection of hydrogen by the extraordinary Hall effect in CoPd alloys

TL;DR: In this article, the effect of hydrogen adsorption on the extraordinary Hall phenomenon (EHE) in ferromagnetic CoPd films is studied as a function of composition, thickness, substrate and hydrogen concentration in atmosphere.
Journal ArticleDOI

Study of the magnetic interface and its effect in Fe/NiFe bilayers of alternating order

TL;DR: In this article, the authors present a comprehensive study on the magnetization reversal in the Fe/NiFe bilayer system by alternating the order of the magnetic layers, showing that the magnetic parameters such as coercivity HC, and anisotropy field HK become almost doubled when a NiFe layer is grown over the Fe layers.
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Study of magnetic interface and its effect in Fe/NiFe bilayers of alternating order

TL;DR: In this article, the authors present a comprehensive study on the magnetization reversal in Fe/NiFe bilayer system by alternating the order of the magnetic layers, showing that the magnetic parameters such as coercivity HC, and anisotropy field HK become almost doubled when NiFe layer is grown over the Fe layers.
Posted Content

Positive versus negative resistance response to hydrogenation in palladium and its alloys

TL;DR: In this paper, the authors explore the case of palladium-based thin films absorbing hydrogen and demonstrate that expansion of thickness is an important mechanism determining the magnitude and the very polarity of the resistance response to hydrogenation in high resistivity films.