S
Sung-Min Yoon
Researcher at Kyung Hee University
Publications - 234
Citations - 4206
Sung-Min Yoon is an academic researcher from Kyung Hee University. The author has contributed to research in topics: Thin-film transistor & Non-volatile memory. The author has an hindex of 28, co-authored 211 publications receiving 3626 citations. Previous affiliations of Sung-Min Yoon include Electronics and Telecommunications Research Institute & Tokyo Institute of Technology.
Papers
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Journal ArticleDOI
21.2: Al and Sn-Doped Zinc Indium Oxide Thin Film Transistors for AMOLED Back-Plane
Doo-Hee Cho,Shinhyuk Yang,Sang-Hee Ko Park,Chun-Won Byun,Sung-Min Yoon,Jeong-Ik Lee,Chi-Sun Hwang,Hye Yong Chu,Kyoung Ik Cho +8 more
TL;DR: In this paper, the transparent bottom gate TFTs using Al and Sn-doped zinc indium oxide (AT-ZIO) as an active layer were fabricated using RF magnetron sputtering at room temperature.
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Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor
TL;DR: In this article, the authors investigated the visible photon accelerated negative bias instability (NBI) in amorphous In-Ga-Zn-O (a-IGZO) thin film transistor (TFT).
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Sb-Se-based phase-change memory device with lower power and higher speed operations
Sung-Min Yoon,Nam-Yeal Lee,Sang-Ouk Ryu,Kyu-Jeong Choi,Yun-Kyoung Park,Seung-Yun Lee,Byoung-Gon Yu,Myung-Jin Kang,Se-Young Choi,Matthias Wuttig +9 more
TL;DR: In this paper, a phase-change material of Sb/sub 65/Se/sub 35/ was proposed for nonvolatile memory applications, which showed a good electrical threshold switching characteristic in the dc current voltage measurement.
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Fully Transparent Non‐volatile Memory Thin‐Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 °C
Sung-Min Yoon,Shinhyuk Yang,Chun-Won Byun,Sang-Hee Ko Park,Doo-Hee Cho,Soon-Won Jung,Oh-Sang Kwon,Chi-Sun Hwang +7 more
TL;DR: In this article, a fully transparent non-volatile memory thin-film transistor (T-MTFT) is demonstrated, which is composed of organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and oxide semiconducting Al-Zn-Sn-O (AZTO) layers, in which thin Al 2 O 3 is introduced between two layers.
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Transition of dominant instability mechanism depending on negative gate bias under illumination in amorphous In-Ga-Zn-O thin film transistor
TL;DR: The gate bias dependence on the negative bias instability under illumination was examined in this paper, where the dominant mechanism was changed from simple charge trapping to that accompanied by generation of subgap states.