Journal ArticleDOI
21.2: Al and Sn-Doped Zinc Indium Oxide Thin Film Transistors for AMOLED Back-Plane
Doo-Hee Cho,Shinhyuk Yang,Sang-Hee Ko Park,Chun-Won Byun,Sung-Min Yoon,Jeong-Ik Lee,Chi-Sun Hwang,Hye Yong Chu,Kyoung Ik Cho +8 more
- Vol. 40, Iss: 1, pp 280-283
TLDR
In this paper, the transparent bottom gate TFTs using Al and Sn-doped zinc indium oxide (AT-ZIO) as an active layer were fabricated using RF magnetron sputtering at room temperature.Abstract:
We have fabricated the transparent bottom gate TFTs using Al and Sn-doped zinc indium oxide (AT-ZIO) as an active layer. The AT-ZIO active layer was deposited by RF magnetron sputtering at room temperature, and AT-ZIO TFT showed a field effect mobility of 15.6 cm2/Vs even before annealing. The mobility increased with increasing In2O3 content and post-annealing temperature. The AT-ZIO TFT exhibited afield effect mobility of 33 cm2/Vs, a sub-threshold swing of 0.08 V/dec, and an on/off current ratio of more than 109 after Al2O3 passivation and post-annealing. We have fabricated AMOLED panels with the bottom gate AT-ZIO TFT back-plane successfully.read more
Citations
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References
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Journal ArticleDOI
Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors
TL;DR: In this paper, a-IGZO is used as the channel layer for flexible and transparent TFTs. But, the performance of the flexible TFT was evaluated at room temperature and at temperatures up to 500 °C.
Journal ArticleDOI
Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application
TL;DR: In this article, a chemical design concept of ionic amorphous oxide semiconductor (IAOS) and its unique electron transport properties, and electronic structure, by comparing them with those of conventional ammorphous semiconductors is addressed.
Journal ArticleDOI
High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer
TL;DR: In this article, transparent thin-film transistors (TTFTs) with an amorphous zinc tin oxide channel layer formed via rf magnetron sputter deposition are demonstrated.
Journal ArticleDOI
High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper
Min-Kyu Kim,Jong Han Jeong,Hun Jung Lee,Tae Kyung Ahn,Hyun Soo Shin,Jin-Seong Park,Jae Kyeong Jeong,Yeon-Gon Mo,Hye-Dong Kim +8 more
TL;DR: In this article, thin film transistors (TFTs) were fabricated using an amorphous indium gallium zinc oxide (a-IGZO) channel, by rf sputtering at room temperature and for which the channel length and width are patterned by photolithography and dry etching.
Journal ArticleDOI
Influence of the semiconductor thickness on the electrical properties of transparent TFTs based on indium zinc oxide
TL;DR: In this article, a high performance bottom-gate n-type transparent thin-film transistors are reported, being the discussion primarily focused on the influence of the indium zinc oxide active layer thickness on the properties of the devices.