S
SungWoo Nam
Researcher at University of Illinois at Urbana–Champaign
Publications - 83
Citations - 5017
SungWoo Nam is an academic researcher from University of Illinois at Urbana–Champaign. The author has contributed to research in topics: Graphene & Graphene nanoribbons. The author has an hindex of 24, co-authored 75 publications receiving 3962 citations. Previous affiliations of SungWoo Nam include Harvard University & University of California, Berkeley.
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Journal ArticleDOI
Layer-by-layer assembly of nanowires for three-dimensional, multifunctional electronics.
TL;DR: The ability to assemble reproducibly sequential layers of distinct types of NW-based devices coupled with the breadth of NW building blocks should enable the assembly of increasing complex multilayer and multifunctional 3D electronics in the future.
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High-Performance, Transparent, and Stretchable Electrodes Using Graphene–Metal Nanowire Hybrid Structures
Mi Sun Lee,Kyongsoo Lee,So Yun Kim,Heejoo Lee,Jihun Park,Kwang Hyuk Choi,Han-Ki Kim,Dae Gon Kim,Dae Young Lee,SungWoo Nam,Jang Ung Park +10 more
TL;DR: Low sheet resistance with high transmittance, robust stability against electric breakdown and oxidation, and superb flexibility and stretchability are observed, and these multiple functionalities of the hybrid structures suggest a future promise for next generation electronics.
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Programmable nanowire circuits for nanoprocessors
Hao Yan,Hwan Sung Choe,SungWoo Nam,Yongjie Hu,Shamik Das,James F. Klemic,James C. Ellenbogen,Charles M. Lieber +7 more
TL;DR: An architecture to integrate the programmable nanowire FETs and define a logic tile consisting of two interconnected arrays with 496 functional configurable FET nodes in an area of ∼960 μm2, representing a significant advance in the complexity and functionality of nanoelectronic circuits built from the bottom up with a tiled architecture that could be cascaded to realize fully integrated nanoprocessors with computing, memory and addressing capabilities.
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InAs/InP Radial Nanowire Heterostructures as High Electron Mobility Devices
TL;DR: The rational design and synthesis of InAs/InP core/shell NW heterostructures with quantum-confined, high-mobility electron carriers opens up opportunities for fundamental and applied studies of quantum coherent transport and high-speed, low-power nanoelectronic circuits.
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Synthesis of monolithic graphene–graphite integrated electronics
TL;DR: An unconventional approach for the synthesis of monolithically integrated electronic devices based on graphene and graphite, which represents substantial progress towards encoding electronic functionality through chemical synthesis and suggests the future promise of one-step integration of graphene-graphite based electronics.