SungWoo Nam

TL;DR: The ability to assemble reproducibly sequential layers of distinct types of NW-based devices coupled with the breadth of NW building blocks should enable the assembly of increasing complex multilayer and multifunctional 3D electronics in the future.

TL;DR: Low sheet resistance with high transmittance, robust stability against electric breakdown and oxidation, and superb flexibility and stretchability are observed, and these multiple functionalities of the hybrid structures suggest a future promise for next generation electronics.

TL;DR: An architecture to integrate the programmable nanowire FETs and define a logic tile consisting of two interconnected arrays with 496 functional configurable FET nodes in an area of ∼960 μm2, representing a significant advance in the complexity and functionality of nanoelectronic circuits built from the bottom up with a tiled architecture that could be cascaded to realize fully integrated nanoprocessors with computing, memory and addressing capabilities.

TL;DR: The rational design and synthesis of InAs/InP core/shell NW heterostructures with quantum-confined, high-mobility electron carriers opens up opportunities for fundamental and applied studies of quantum coherent transport and high-speed, low-power nanoelectronic circuits.

TL;DR: An unconventional approach for the synthesis of monolithically integrated electronic devices based on graphene and graphite, which represents substantial progress towards encoding electronic functionality through chemical synthesis and suggests the future promise of one-step integration of graphene-graphite based electronics.