S
Sushanta Kumar Mohapatra
Researcher at KIIT University
Publications - 84
Citations - 1702
Sushanta Kumar Mohapatra is an academic researcher from KIIT University. The author has contributed to research in topics: MOSFET & Transconductance. The author has an hindex of 15, co-authored 79 publications receiving 1168 citations. Previous affiliations of Sushanta Kumar Mohapatra include National Institute of Technology, Rourkela.
Papers
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Estimation of analog/RF figures-of-merit using device design engineering in gate stack double gate MOSFET
TL;DR: In this article, the analog performance as well as some new RF figures of merit are reported for the first time of a gate stack double gate (GS-DG) metal oxide semiconductor field effect transistor (MOSFET) with various gates and channel engineering.
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Residual Energy-Based Cluster-Head Selection in WSNs for IoT Application
Trupti Mayee Behera,Sushanta Kumar Mohapatra,Umesh Chandra Samal,Mohammad S. Khan,Mahmoud Daneshmand,Amir H. Gandomi +5 more
TL;DR: A efficient CH election scheme that rotates the CH position among the nodes with higher energy level as compared to other to elect the next group of CHs for the network that suits for IoT applications, such as environmental monitoring, smart cities, and systems is proposed.
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Energy-efficient modified LEACH protocol for IoT application
TL;DR: The existing low-energy adaptive clustering hierarchy (LEACH) clustering protocol is modified by introducing a threshold limit for cluster head selection with simultaneously switching the power level between the nodes with outperforms as compared to the existing LEACH protocol.
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I-SEP: An Improved Routing Protocol for Heterogeneous WSN for IoT-Based Environmental Monitoring
Trupti Mayee Behera,Sushanta Kumar Mohapatra,Umesh Chandra Samal,Mohammad S. Khan,Mahmoud Daneshmand,Amir H. Gandomi +5 more
TL;DR: An improvement of the existing stable election protocol (SEP) that implements a threshold-based cluster head (CH) selection for a heterogeneous network that outperforms SEP and DEEC protocols with an improvement of 300% in network lifetime and 56% in throughput.
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Impact of high-k gate dielectric on analog and RF performance of nanoscale DG-MOSFET
TL;DR: An attempt to characterize the analog and RF performance of the high-k metal gate (HKMG) double gate (DG) metal oxide semiconductor field effect transistor (MOSFET) in nanoscale through 2-D device simulation.