We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

Band parameters for III–V compound semiconductors and their alloys

: The unpolarized absorption and circular dichroism spectra of the fundamental vibrational transitions of the chiral molecule, 4-methyl-2-oxetanone, are calculated ab initio. Harmonic force fields are obtained using Density Functional Theory (DFT), MP2, and SCF methodologies and a 5S4P2D/3S2P (TZ2P) basis set. DFT calculations use the Local Spin Density Approximation (LSDA), BLYP, and Becke3LYP (B3LYP) density functionals. Mid-IR spectra predicted using LSDA, BLYP, and B3LYP force fields are of significantly different quality, the B3LYP force field yielding spectra in clearly superior, and overall excellent, agreement with experiment. The MP2 force field yields spectra in slightly worse agreement with experiment than the B3LYP force field. The SCF force field yields spectra in poor agreement with experiment.The basis set dependence of B3LYP force fields is also explored: the 6-31G* and TZ2P basis sets give very similar results while the 3-21G basis set yields spectra in substantially worse agreements with experiment. jg

Ab initio calculation of vibrational absorption and circular dichroism spectra using density functional force fields

Have you ever felt that the very title, Progress in Optics, conjured an image in your mind? Don’t you see a row of handsomely printed books, bearing the editorial stamp of one of the most brilliant members of the optics community, and chronicling the field of optics since the invention of the laser? If so, you are certain to move the bookend to make room for Volume 16, the latest of this series. It contains seven chapters on widely diverging topics, written by well-known authorities in their fields. These are: 1) Laser Selective Photophysics and Photochemistry by V. S. Letokhov, 2) Recent Advances in Phase Profiles (sic) Generation by J. J. Clair and C. I. Abitbol, 3 ) Computer-Generated Holograms: Techniques and Applications by W.-H. Lee, 4) Speckle Interferometry by A. E. Ennos, 5 ) Deformation  Invariant, Space-Variant Optical  Pattern Recognition by D. Casasent and D. Psaltis, 6) Light Emission from High-Current Surface-Spark Discharges by R. E. Beverly, and 7) Semiclassical Radiation  Theory within a  QuantumMechanical Framework by I. R. Senitzkt. The  breadth of topic  matter  spanned  by  these  chapters makes it impossible, for this reviewer at least, to pass judgement on the comprehensiveness, relevance, and completeness of every chapter. With an editorial board as prominent as that of Progress in Optics, however, it seems hardly likely that such comments should be necessary. It should certainly be possible to take the authority of each author as credible. The only remaining judgment to be  made on these chapters is their readability. In short, what are they like to read? The first sentence of the first chapter greets the eye with an obvious typographical error: “The creation of coherent laser light source, that have tunable radiation, opened the . . . .” Two pages later we find: “When two types of atoms or molecules of different isotopic composition ( A and B ) have even one spectral line that does not overlap with others, it is pos-

Progress in optics

Solid films are usually metastable or unstable in the as-deposited state, and they will dewet or agglomerate to form islands when heated to sufficiently high temperatures. This process is driven by surface energy minimization and can occur via surface diffusion well below a film's melting temperature, especially when the film is very thin. Dewetting during processing of films for use in micro- and nanosystems is often undesirable, and means of avoiding dewetting are important in this context. However, dewetting can also be useful in making arrays of nanoscale particles for electronic and photonic devices and for catalyzing growth of nanotubes and nanowires. Templating of dewetting using patterned surface topography or prepatterning of films can be used to create ordered arrays of particles and complex patterns of partially dewetted structures. Studies of dewetting can also provide fundamental new insight into the effects of surface energy anisotropy and facets on shape evolution.

Solid-State Dewetting of Thin Films

Heterojunctions between three-dimensional (3D) semiconductors with different bandgaps are the basis of modern light-emitting diodes, diode lasers and high-speed transistors. Creating analogous heterojunctions between different 2D semiconductors would enable band engineering within the 2D plane and open up new realms in materials science, device physics and engineering. Here we demonstrate that seamless high-quality in-plane heterojunctions can be grown between the 2D monolayer semiconductors MoSe2 and WSe2. The junctions, grown by lateral heteroepitaxy using physical vapour transport, are visible in an optical microscope and show enhanced photoluminescence. Atomically resolved transmission electron microscopy reveals that their structure is an undistorted honeycomb lattice in which substitution of one transition metal by another occurs across the interface. The growth of such lateral junctions will allow new device functionalities, such as in-plane transistors and diodes, to be integrated within a single atomically thin layer.

Lateral heterojunctions within monolayer MoSe2–WSe2 semiconductors

Surface segregation of In atoms during molecular beam epitaxy (MBE) and its influence on the energy levels in InGaAs/GaAs quantum wells (QWs) were systematically studied using secondary‐ion mass spectroscopy (SIMS) and photoluminescence (PL). Strong dependence of In surface segregation on the growth conditions was found; when the growth temperature was raised from 370 to 520 °C, the segregation length was observed to increase from 0.8 up to 2.9 nm, accompanied by an appreciable peak energy shift in the PL spectra of the InGaAs/GaAs QWs. The correlation between In surface segregation and the energy levels in InGaAs/GaAs QWs was clarified for the first time.

Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells

We present a photoluminescence (PL) study on the growth mode changeover during growth of Ge on Si(100) substrates. Intense PL signals originating from both the flat Ge layer and the three‐dimensional (3D) Ge islands are observed from Si/Ge/Si quantum wells with various Ge coverage. The onset of the 3D island formation is determined to be 3.7 monolayers (ML). It is also found that the 3D islands grow with only 3.0 ML of the flat Ge layer retained. This implies that only the 3.0 ML Ge is thermodynamically stable on Si(100) and hence corresponds to the ‘‘equilibrium’’ critical thickness.

Island formation during growth of Ge on Si(100): A study using photoluminescence spectroscopy

Self‐limitation in the surface segregation of Ge atoms in the Si epitaxial overlayers arising from the surface bond geometry on Si(100) during molecular beam epitaxy has been investigated theoretically. It was found that Ge surface segregation is strongly limiting when the Ge concentration exceeds 0.01 monolayer. As a result of this self‐limitation, segregation profiles of Ge in Si overlayers are found to decay nonexponentially in the growth direction with a kink in the profile around 3×1020 cm−3, which is in close agreement with the experimental observation. The kinetic barrier of the Ge surface segregation is estimated to be 1.63±0.1 eV.

Self-limitation in the surface segregation of Ge atoms during Si molecular beam epitaxial growth

MOVPE Growth of Cubic GaN on GaAs Using Dimethylhydrazine

Phononless radiative recombination is observed in luminescence spectra of Ge quantum wells decorated by self-organized Stranski–Krastanow (S–K) dots grown on Si (100). External uniaxial tensile stress along [011] allows the discrimination of phonon-missing optical transitions. The phononless recombination is attributed to a dipole-allowed k diagonal Δ1-Γ25′ interband transition involving the hole in the Ge wetting layer and the electron in a Si quantum dot encompassed by large S–K dots. The weak oscillator strength of the phononless recombination is evidenced by its slow decay kinetics. The results indicate that low-lying broad band features due to S–K dots are also of phononless origins.

Susumu Fukatsu

Papers

Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells

Island formation during growth of Ge on Si(100): A study using photoluminescence spectroscopy

Self-limitation in the surface segregation of Ge atoms during Si molecular beam epitaxial growth

MOVPE Growth of Cubic GaN on GaAs Using Dimethylhydrazine

Phononless radiative recombination of indirect excitons in a Si/Ge type-II quantum dot