S
Suzanne E. Mohney
Researcher at Pennsylvania State University
Publications - 234
Citations - 5806
Suzanne E. Mohney is an academic researcher from Pennsylvania State University. The author has contributed to research in topics: Ohmic contact & Contact resistance. The author has an hindex of 38, co-authored 226 publications receiving 5375 citations. Previous affiliations of Suzanne E. Mohney include Foundation University, Islamabad & University of Wisconsin-Madison.
Papers
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Proceedings ArticleDOI
Contacts to group III nitride semiconductor alloys
TL;DR: In this article, the authors explored a special consideration of the contact metallurgy alloy semiconductors and how interfacial reactions with metals can lead to compositional shifts in the semiconductor alloys beneath the contacts.
Journal ArticleDOI
High-temperature-capable ALD-based inorganic lift-off process
TL;DR: In this article, a bilayer stack of metal oxides deposited by plasma-enhanced atomic layer deposition (PEALD) was used to provide a lift-off process compatible with high temperatures (>500°C) by using selective wet-etching techniques.
Journal ArticleDOI
Nanostructured germanium synthesized by high-pressure chemical vapor deposition in mesoporous silica templates
Briana Laubacker,Ke Yan Wang,Maxwell Wetherington,Nichole M. Wonderling,John V. Badding,Suzanne E. Mohney +5 more
Journal ArticleDOI
Effect of Nitrogen Doping and Oxidation of Graphene on the Deposition of Platinum from Trimethyl(methylcyclopentadienyl)platinum(IV)
Journal ArticleDOI
Low-Frequency Three-Terminal Charge Pumping Applied to Silicon Nanowire Field-Effect Transistors
Sarpatwari Karthik,Osama O. Awadelkarim,L. J. Passmore,Tsung-ta Ho,M. Kuo,N. S. Dellas,Theresa S. Mayer,Suzanne E. Mohney +7 more
TL;DR: In this article, the application of the charge-pumping (CP) technique to vapor-liquid-solid grown silicon nanowire (SiNW) transistors is reported, and the relatively high trap densities measured and the observed saturation of the CP signal with the measurement frequency are discussed in terms of device dimensions and geometry.