Suzanne E. Mohney

TL;DR: In this article, annealing was found to be critical for reducing the contact resistance but did not degrade the operation of field effect transistors that are part of the test structure.

TL;DR: In this article, the authors measured the intensity of the X-ray diffraction peak as a function of oxidation time at various temperatures, and the initial stage of the oxidation was found to be limited by the rate of an interfacial reaction with an activation energy of {approximately} 3 {times} 10{sup 5} J/mol.

TL;DR: A uniform morphology was achieved for nanowires with an appropriate combination of Si nanowire diameter and Pt film thickness to form PtSi without excess Pt or Si in the planar silicidation process.

TL;DR: In this paper, phase diagrams are estimated for transition metal-Ga-N systems and the diagrams are then used as an aid in predicting the reaction products of annealed metal/GaN contacts, to suggest materials that may be useful as thermally stable electrical contacts and to explore the role of the partial pressure of N2 in the annealing environment on the reactions in metal and GaN contacts.

TL;DR: The orientation dependence of Ni silicide phase formation in the silicidation of silicon nanowires by Ni has been studied in this paper, where lattice matching at both the silicide/Si growth front and the surface of the original SiNW may play a significant role in determining the first silicide segment to grow.