S
Suzuki Toshiya
Researcher at ASM International
Publications - 3
Citations - 115
Suzuki Toshiya is an academic researcher from ASM International. The author has contributed to research in topics: Thin film & Substrate (electronics). The author has an hindex of 2, co-authored 3 publications receiving 115 citations.
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Patent
FORMATION OF SiN THIN FILMS
TL;DR: In this article, a plurality of plasma enhanced atomic layer deposition (PEALD) cycles are used to form silicon nitride thin films on a substrate in a reaction space under high pressure, where at least one PEALD cycle comprises contacting the substrate with a nitrogen plasma at a process pressure of 20 to 500 Torr within the reaction space.
Patent
Selective peald of oxide on dielectric
TL;DR: In this paper, a method for selectively depositing oxide thin films on a dielectric surface of a substrate relative to a metal surface is described, which can include at least one PEALD cycle including alternately and sequentially contacting the substrate with a first precursor comprising oxygen and a species to be included in the oxide, such as a metal or silicon, and a second plasma reactant.
Patent
Method of forming SiOCN thin film
Suzuki Toshiya,Pore Viljami J +1 more
TL;DR: In this paper, methods for deposition of silicon oxycarbonitride (SiOCN) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor and a second reactant that does not include oxygen.