D
Dai Ishikawa
Researcher at ASM International
Publications - 8
Citations - 353
Dai Ishikawa is an academic researcher from ASM International. The author has contributed to research in topics: Layer (electronics) & Thin film. The author has an hindex of 5, co-authored 8 publications receiving 353 citations.
Papers
More filters
Patent
FORMATION OF SiN THIN FILMS
TL;DR: In this article, a plurality of plasma enhanced atomic layer deposition (PEALD) cycles are used to form silicon nitride thin films on a substrate in a reaction space under high pressure, where at least one PEALD cycle comprises contacting the substrate with a nitrogen plasma at a process pressure of 20 to 500 Torr within the reaction space.
Patent
Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
TL;DR: In this article, a method of forming spacers for spacer-defined multiple pattering (SDMP) is described. But the method is not suitable for the case of static templates.
Patent
Selective deposition of metallic films
TL;DR: In this article, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon, and the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deblurring process.
Patent
Method for forming silicon nitride film selectively on sidewalls of trenches
Dai Ishikawa,Atsuki Fukazawa,Eiichiro Shiba,Shinya Ueda,Taishi Ebisudani,SeungJu Chun,YongMin Yoo,YoonKi Min,Seyong Kim,Jongwan Choi +9 more
TL;DR: In this paper, a method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si-N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface was given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes.
Patent
Reaction chamber passivation and selective deposition of metallic films
Delphine Longrie,Antti Niskanen,Han Wang,Qi Xie,Jan Willem Maes,Chen Shang,Toshiharu Watarai,Onuma Takahiro,Dai Ishikawa,Kunitoshi Namba +9 more
TL;DR: In this paper, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon, and the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deblurring process.