A gas inlet system for a wafer processing reactor includes a tubular gas manifold conduit adapted to be connected to a gas inlet port of the wafer processing reactor; and gas feeds including a first feed for feeding a first gas into the tubular gas manifold conduit and a second feed for feeding a second gas into the tubular gas manifold conduit. Each feed has two or more injection ports connected to the tubular gas manifold conduit at a first axial position of the tubular gas manifold conduit, and the injection ports of each of the gas feeds are evenly distributed along a circumference of the tubular gas manifold conduit at the first axial position.

Gas Supply Manifold And Method Of Supplying Gases To Chamber Using Same

A gas distribution system, a reactor system including the gas distribution system, and method of using the gas distribution system and reactor system are disclosed. The gas distribution system can be used in gas-phase reactor systems to independently fine tune gas source locations and gas flow rates of reactants to a reaction chamber of the reactor systems.

Gas distribution system, reactor including the system, and methods of using the same

Provided herein are methods and related apparatus that facilitate patterning by performing highly non-conformal (directional) deposition on patterned structures. The methods involve depositing films on a patterned structure, such as a hard mask. The deposition may be both substrate-selective such that the films have high etch selectivity with respect to an underlying material to be etched and pattern-selective such that the films are directionally deposited to replicate the pattern of the patterned structure. In some embodiments, the deposition is performed in the same chamber as a subsequent etch is performed. In some embodiments, the deposition may be performed in a separate chamber (e.g., a PECVD deposition chamber) that is connected to the etch chamber by a vacuum transfer chamber. The deposition may be performed prior to or at selected intermittences during at etch process. In some embodiments, the deposition involves multiple cycles of a deposition and treatment process.

Directional deposition on patterned structures

An improved exhaust system for a gas-phase reactor and a reactor and system including the exhaust system are disclosed. The exhaust system includes a channel fluidly coupled to an exhaust plenum. The improved exhaust system allows operation of a gas-phase reactor with desired flow characteristics while taking up relatively little space within a reaction chamber.

Gas-phase reactor and system having exhaust plenum and components thereof

Methods and precursors for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. In some embodiments, deposited silicon nitride can be treated with a plasma treatment. The plasma treatment can be a nitrogen plasma treatment. In some embodiments the silicon precursors for depositing the silicon nitride comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). In some embodiments, a method for depositing silicon nitride films comprises a multi-step plasma treatment.

Deposition of SiN

Methods of forming silicon nitride thin films on a substrate in a reaction space under high pressure are provided The methods can include a plurality of plasma enhanced atomic layer deposition (PEALD) cycles, where at least one PEALD deposition cycle comprises contacting the substrate with a nitrogen plasma at a process pressure of 20 Torr to 500 Torr within the reaction space In some embodiments the silicon precursor is a silyly halide, such as H 2 SiI 2  In some embodiments the processes allow for the deposition of silicon nitride films having improved properties on three dimensional structures For example, such silicon nitride films can have a ratio of wet etch rates on the top surfaces to the sidewall of about 1:1 in dilute HF

FORMATION OF SiN THIN FILMS

Provoded are a method and a precursor for forming silicon nitride films In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD In some embodiments, deposited silicon nitride can be treated with a plasma treatment The plasma treatment can be a nitrogen plasma treatment In some embodiments the silicon precursors for depositing the silicon nitride comprise an iodine ligand The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (05%) In some embodiments, a method for depositing silicon nitride films comprises a multi-step plasma treatment

Method of forming a sin thin film

A shower plate adapted to be installed in a plasma deposition apparatus including a gas inlet port, a shower head, a reaction chamber and an exhaust duct, the shower plate being adapted to be attached to the showerhead and having: a front surface adapted to face the gas inlet port; and a rear surface opposite to the front surface, wherein the shower plate has multiple apertures each extending from the front surface to the rear surface, and wherein the shower plate further has at least one aperture extending from the front surface side of the shower plate to the exhaust duct.

Ryoko Yamada

Papers

Deposition of SiN

FORMATION OF SiN THIN FILMS

Method of forming a sin thin film

Shower plate structure for exhausting deposition inhibiting gas

Method of forming SiN thin film on surface of substrate in reaction space