T. Choi

TL;DR: In this article, the authors investigated the crossover between weak localization and weak antilocalization in InAs of different diameters (75 nm-140 nm-217 nm) for a magnetic field applied perpendicularly to the nanowire axis, and extracted the spin orbit and coherence lengths using a quasi-one-dimensional model of the conductance.

TL;DR: In this article, the authors studied a double quantum dot in different coupling regimes and observed additional structures inside the finite-bias triangles, which can be attributed to electronic excited dot states, while others are probably due to modulations of the transmission of the tunnel barriers connecting the system to source and drain leads.

TL;DR: The effect of electron-phonon coupling in a graphene and an InAs nanowire double quantum dot is studied to reveal oscillations of the DQD current periodic in energy detuning between the two levels.

TL;DR: In this paper, a gate-defined quantum dot (QD) in an InAs nanowire is fabricated on top of a quantum point contact realized in a two-dimensional electron gas, which is used to perform time-averaged as well as time-resolved charge detection experiments for electron flow through the quantum dot.

TL;DR: In this paper, low-temperature transport experiments on a $p$-type GaAs quantum dot capacitively coupled to a quantum point contact are presented and the time-averaged and time-resolved detection of charging events of the dot are demonstrated and they are used to extract the tunneling rates into and out of the quantum dot.