T
T. D. Haeffner
Researcher at Vanderbilt University
Publications - 25
Citations - 400
T. D. Haeffner is an academic researcher from Vanderbilt University. The author has contributed to research in topics: Logic gate & MOSFET. The author has an hindex of 10, co-authored 22 publications receiving 290 citations.
Papers
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Journal ArticleDOI
Analysis of TID Process, Geometry, and Bias Condition Dependence in 14-nm FinFETs and Implications for RF and SRAM Performance
M. P. King,Xusheng Wu,M. Eller,S. Samavedam,Marty R. Shaneyfelt,A. I. Silva,Bruce L. Draper,William Rice,T.L. Meisenheimer,J.A. Felix,En Xia Zhang,T. D. Haeffner,Dennis R. Ball,K. J. Shetler,Michael L. Alles,Jeffrey S. Kauppila,Lloyd W. Massengill +16 more
TL;DR: In a 14-nm FinFET technology, the modeling indicates devices with high channel stop doping show the most robust response to TID allowing stable operation of ring oscillators and the SRAM bit-cell with minimal shift in critical operating characteristics.
Journal ArticleDOI
On-Chip Measurement of Single-Event Transients in a 45 nm Silicon-on-Insulator Technology
T. D. Loveless,Jeffrey S. Kauppila,S. Jagannathan,Dennis R. Ball,J. D. Rowe,N. J. Gaspard,N. M. Atkinson,R. W. Blaine,Trey Reece,J. R. Ahlbin,T. D. Haeffner,Michael L. Alles,W.T. Holman,Bharat L. Bhuva,Lloyd W. Massengill +14 more
TL;DR: In this paper, a built-in self-test circuit for the measurement of single event transients (SET) has been implemented in a 45 nm partially depleted silicon-on-insulator technology that allows for the extraction of measurement-induced uncertainty.
Journal ArticleDOI
Analysis of Bulk FinFET Structural Effects on Single-Event Cross Sections
Patrick Nsengiyumva,Lloyd W. Massengill,Michael L. Alles,Bharat L. Bhuva,Dennis R. Ball,Jeffrey S. Kauppila,T. D. Haeffner,W. Timothy Holman,Robert A. Reed +8 more
TL;DR: In this paper, a set of upset criteria based on circuit characteristic switching time frame is developed and used to bridge transistor-level TCAD simulations to circuit-level single-event (SE) upset cross sections for advanced (fast and small) digital circuits.
Journal ArticleDOI
Circuit-Level Layout-Aware Single-Event Sensitive-Area Analysis of 40-nm Bulk CMOS Flip-Flops Using Compact Modeling
Jeffrey S. Kauppila,T. D. Haeffner,Dennis R. Ball,A. V. Kauppila,T. D. Loveless,S. Jagannathan,Andrew L. Sternberg,Bharat L. Bhuva,Lloyd W. Massengill +8 more
TL;DR: A circuit-level layout-aware single-event simulation capability that can be performed over the entire flip-flop layout and show excellent agreement with broadbeam heavy-ion test data is presented.
Journal ArticleDOI
The Application of RHBD to n-MOSFETs Intended for Use in Cryogenic-Temperature Radiation Environments
Jun Bongim,Akil K. Sutton,R.M. Diestelhorst,G.J. Duperon,John D. Cressler,Jeffrey D. Black,T. D. Haeffner,Robert A. Reed,Michael L. Alles,Ronald D. Schrimpf,Daniel M. Fleetwood,Paul W. Marshall +11 more
TL;DR: In this paper, the authors investigate the effect of proton and X-ray irradiation on conventional, annular, and ringed-source radiation-hardening-by-design (RHBD) CMOS devices.