T
Taewoo Ha
Researcher at Yonsei University
Publications - 46
Citations - 1020
Taewoo Ha is an academic researcher from Yonsei University. The author has contributed to research in topics: Terahertz radiation & Band gap. The author has an hindex of 14, co-authored 40 publications receiving 718 citations. Previous affiliations of Taewoo Ha include Sungkyunkwan University.
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Journal ArticleDOI
Electrically tunable slow light using graphene metamaterials
Teun-Teun Kim,Hyeon-Don Kim,Rongkuo Zhao,Sang Soon Oh,Taewoo Ha,Dong Seob Chung,Young Hee Lee,Bumki Min,Shuang Zhang +8 more
TL;DR: In this paper, the group delay of terahertz light can be dynamically controlled under a small gate voltage using a two coupled harmonic oscillators model, made possible by an effective control of the dissipative loss of the radiative dark resonator by varying the graphene's optical conductivity.
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All-perovskite transparent high mobility field effect using epitaxial BaSnO3 and LaInO3
Useong Kim,Chulkwon Park,Taewoo Ha,Young Mo Kim,Namwook Kim,Chanjong Ju,Jisung Park,Jaejun Yu,Jae Hoon Kim,Kookrin Char +9 more
TL;DR: In this article, an all-perovskite transparent heterojunction field effect transistor made of two lattice-matched perovskites oxides, BaSnO3 and LaInO3, was demonstrated.
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Interfacial trap density-of-states in pentacene- and ZnO-based thin-film transistors measured via novel photo-excited charge-collection spectroscopy.
Kimoon Lee,Min Suk Oh,Sung Jin Mun,Kwang Hoon Lee,Taewoo Ha,Jae Hoon Kim,Sang-Hee Ko Park,Chi-Sun Hwang,Byoung Hun Lee,Myung Mo Sung,Seongil Im +10 more
TL;DR: Deep-level transient spectroscopy and gate-bias stress techniques may be used with working TFT devices to characterize the interface trap states, utilizing thermal and electrical energies, respectively, but DLTS is not adequate for organic based devices due to their thermal instability and gatebiasstress technique can never properly examine the electronic states of the deep-level traps.
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Dopant-site-dependent scattering by dislocations in epitaxial films of perovskite semiconductor BaSnO3
Useong Kim,Chulkwon Park,Taewoo Ha,Rokyeon Kim,Hyo Sik Mun,Hoon Kim,Hyung Joon Kim,Tai Hoon Kim,Namwook Kim,Jaejun Yu,Kee Hoon Kim,Jae Hoon Kim,Kookrin Char +12 more
TL;DR: In this article, the conduction mechanism in Sb-doped BaSnO3 epitaxial films was studied and compared with that of its counterpart, La-Doped SbO3, and it was shown that electron scattering by threading dislocations depends critically on the dopant site.
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Chemical and Physical Characteristics of Doxorubicin Hydrochloride Drug-Doped Salmon DNA Thin Films
Bramaramba Gnapareddy,Sreekantha Reddy Dugasani,Taewoo Ha,Bjorn Paulson,Taehyun Hwang,Taesung Kim,Jae Hoon Kim,Kyunghwan Oh,Sung Ha Park +8 more
TL;DR: Double-stranded salmon DNA (SDNA) was doped with doxorubicin hydrochloride drug molecules (DOX) to determine the binding between DOX and SDNA, and DOX optimum doping concentration in SDNA and there was a tendency for binding with a periodic orientation via intercalation between nucleosides.