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Taihei Matsumoto

Researcher at Osaka University

Publications -  25
Citations -  655

Taihei Matsumoto is an academic researcher from Osaka University. The author has contributed to research in topics: Sessile drop technique & Wetting. The author has an hindex of 13, co-authored 25 publications receiving 595 citations.

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Critical Factors Affecting the Wettability of α‐Alumina by Molten Aluminum

TL;DR: In this paper, the wetting behavior of α-Al2O3 single crystals with three different faces (R, A, and C) and polycrystals (PC) by molten aluminum were studied over a wide temperature range using both a conventional and an improved sessile-drop method.
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Measurement of surface tension of molten copper using the free-fall oscillating drop method

TL;DR: In this article, the surface tension of molten copper was measured by the oscillating drop method using a falling droplet, and the surface oscillation of the droplet was quite simplified during the falling.
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Wetting of (0001) α-Al2O3 single crystals by molten Al

TL;DR: In this paper, the wetting behavior of α-Al 2 O 3 by molten Al was studied over a wide temperature range between 700 and 1500 °C, and the increase in the contact angle with time at temperatures lower than 1200 °C was attributed to the surface structural reconstruction of the (0, 0, 0, 1) α-al 2 O3.
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The influence of surface structure on wetting of α-Al2O3 by aluminum in a reduced atmosphere

TL;DR: An improved sessile-drop wetting experiment was performed in this article to investigate the wettability and adhesion of molten Al on three different oriented α-Al2O3 single crystals, R ( 01 1 2 ), A (11 2 0 ) and C(0001), over a wide temperature range from 800-1500 °C in a reduced Ar-3%H2 atmosphere.
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Surface tension of molten silicon measured by microgravity oscillating drop method and improved sessile drop method

TL;DR: In this paper, the surface tension of molten silicon was measured using both the oscillating drop method and an improved sessile drop method, and the result was expressed by the following equation: γ = −733 −−−0.062(T −−1687) where T is the temperature.