Takanori Matsuzaki

TL;DR: A radio frequency integrated circuit (RFIC) tag consisting of an 8 bit CPU, a 4 kB ROM, a 512B SRAM, and an RF circuit, which communicates using 915 MHz UHF RF signals, has been developed on both a flexible substrate and a glass substrate.

TL;DR: Emerging nonvolatile memory with an oxide-semiconductor-based thin-film transistor (TFT) using indium-gallium-zinc-oxide (IGZO) was developed, and it achieved basic operation at 4.5 V or less and a data retention over 60 days at 85°C.

TL;DR: In this paper, the authors proposed a novel structure for reducing variation in the threshold voltages of memory cells after writing, in which the operation voltage is reduced or the storage capacity is increased by reducing variation of the threshold voltage of memory chips after writing.

TL;DR: In this paper, an amorphous silicon photodiode and an amplifier configured by a thin film transistor are formed integrally over a substrate so that the load driving capacity is improved while reducing cost and mounting space.

TL;DR: In this paper, a novel semiconductor device where multilevel data can be written and read was proposed. But the authors did not specify the type of transistors that were used.