https://hal.archives-ouvertes.fr/hal-00408936/document

Damages induced by heavy ions in titanium silicon carbide: effects of nuclear and electronic interactions at room temperature

We evaluate the quasi-one-dimensional (1D) electron dynamics in a NbSe3 ring crystal using polarization vortex pulses with various azimuthal distributions. The single particle relaxation component reveals a large anisotropy on the crystal, indicating that the electrons in the ring maintain their 1D character. The results also suggest that the polarization vortex evaluates the global polarization property of the closed-loop electron that plays an important role in the quantum correlation phenomena such as the Aharonov-Bohm effect.

Global evaluation of closed-loop electron dynamics in quasi-one-dimensional conductors using polarization vortices

Progress in Niobium and Tantalum coordination chemistry

A self-aligned inkjet printing process has been developed to construct small channel metal oxide (a-IGZO) thin-film transistors (TFTs) with independent bottom gates on transparent glass substrates. Poly(methylsilsesquioxane) was used to pattern hydrophobic banks on the transparent substrate instead of commonly used self-assembled octadecyltrichlorosilane. Photolithographic exposure from backside using bottom-gate electrodes as mask formed hydrophilic channel areas for the TFTs. IGZO ink was selectively deposited by an inkjet printer in the hydrophilic channel region and confined by the hydrophobic bank structure, resulting in the precise deposition of semiconductor layers just above the gate electrodes. Inkjet-printed IGZO TFTs with independent gate electrodes of 10 μm width have been demonstrated, avoiding completely printed channel beyond the broad of the gate electrodes. The TFTs showed on/off ratios of 108, maximum mobility of 3.3 cm2 V-1 s-1, negligible hysteresis, and good uniformity. This method is conductive to minimizing the area of printed TFTs so as to the development of high-resolution printing displays.

High-Resolution Inkjet-Printed Oxide Thin-Film Transistors with a Self-Aligned Fine Channel Bank Structure.

We investigate ion beam etching that uses a planarizing film for smoothing copper surfaces with nm-order roughness. Copper surfaces were cut using a turning machine with a single-crystal diamond tool to prepare mirror surfaces as workpieces. Then, the surfaces were coated with photoresist, and etched using ion beams with an appropriate incidence angle. As a result, tool marks exhibited on the turned surfaces were removed, and the surfaces with a smoothness of nm order were further improved by the ion beam process.

http://iopscience.iop.org/article/10.1143/JJAP.46.6071/pdf

Smoothing of Diamond-Turned Copper Surfaces Using Ion Beams with Aid of Planarizing Film

We report new reflectance results in the plasmon region of orthorhombicTaS 3 (single crystal) through the Peierls transition temperature and near the plasmon region of monoclinic NbSe 3 as a function of temperature. The optical spectra yield the dielectric constant due to core electrons, mass density and electron relaxation time. Furthermore, we discuss the modification of one electron excitations and plasmon collective excitations through charge density wave (CDW) transitions and assign these anomalies in TaS 3 to its normal-incommensurate (215±10 K) and incommensurate-commensurate (170±20 K) transitions in TaS 3 . In NbSe 3 , no modifications are observed through the normal-incommensurate CDW transition temperature (140 K).

Effect of charge density waves on reflectance spectra of TaS3 and NbSe3

Etching of polycrystalline copper by oblique injection of argon ion

Surface smoothness of polycrystalline copper after ion irradiation

Oblique injection of argon ions with energy of 1 keV was conducted for etching of polycrystalline copper. The surface became rough owing to the formation of blisters. The average diameter and height of blisters was approximately 150 and 20–30 nm, respectively. The polycrystalline copper irradiated by argon ions was annealed to rupture the blisters. The retained argon desorbed in the temperature range from 500 to 800 K. The height of blisters significantly reduced to 10–15 nm although the diameter and surface density of blisters roughly remained the same.

/pdf/surface-flatness-of-polycrystalline-copper-after-argon-ion-3kw9u5lrwt.pdf

Takashi Taguchi

Papers

Effect of charge density waves on reflectance spectra of TaS3 and NbSe3

Etching of polycrystalline copper by oblique injection of argon ion

Surface smoothness of polycrystalline copper after ion irradiation

Surface flatness of polycrystalline copper after argon ion etching followed by annealing

Morphological change of polycrystalline copper after ion irradiation followed by annealing