T
Takeo Nakano
Researcher at Seikei University
Publications - 55
Citations - 440
Takeo Nakano is an academic researcher from Seikei University. The author has contributed to research in topics: Sputter deposition & Sputtering. The author has an hindex of 12, co-authored 46 publications receiving 386 citations. Previous affiliations of Takeo Nakano include University of Tokyo & Kanazawa University.
Papers
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Journal ArticleDOI
A New One-Dimensional Platinum System Consisting of Carboxylate-Bridged cis-Diammineplatinum Dimers1
Ken Sakai,Masao Takeshita,Yuko Tanaka,Takuma Ue,Masayuki Yanagisawa,Masaya Kosaka,Taro Tsubomura,Masamichi Ato,Takeo Nakano +8 more
TL;DR: In this article, a carboxylate-bridged cis-diammineplatinum dimer with infinite Pt−Pt bonds has been developed and structurally characterized.
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Structure modification of radio frequency sputtered LaB6 thin films by internal stress
TL;DR: In this article, the effect of sputtering conditions on the film properties of internal stress and crystalline orientation was investigated, and it was shown that an application of a negative bias (−20 V) to substrates results in a greater stress, so that the (110 and (111) orientation becomes more preferential.
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Effect of background gas environment on oxygen incorporation in TiN films deposited using UHV reactive magnetron sputtering
TL;DR: In this article, the effect of base pressure on the incorporation of oxygen into reactively magnetron-sputtered metal-nitride films has been investigated, and the incorporation mechanism is discussed in terms of the coverage-dependent sticking probabilities of O2 and N2 on a Ti metal surface.
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Gas pressure effects on thickness uniformity and circumvented deposition during sputter deposition process
Takeo Nakano,Shigeru Baba +1 more
TL;DR: In this article, a sample holder with three quartz crystal microbalance (QCM) thickness monitors on its surface and measured the distribution of the depositing flux around the sample holder, including the circumvented deposition onto the back face.
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Effects of target voltage during pulse-off period in pulsed magnetron sputtering on afterglow plasma and deposited film structure
TL;DR: In this paper, the effect of the target bias voltage during the pulse-off period in the pulsed magnetron sputtering (PMS) of repetition frequency 200 Hz and duty ratio 5-20% was investigated.