A simple model for the formation of compressive stress in thin films by ion bombardment

A plasma display device includes: a dielectric layer on which a plurality of through-holes of a dielectric layer is disposed in a matrix shape; upper and lower electrode layers formed at both upper and lower surfaces of the dielectric layer; upper and lower substrates disposed on the outer surface of the upper and lower electrode layers; and a third electrode layer having a plurality of third electrodes which are formed between the upper substrate and the upper electrode layer, or the lower substrate and the lower electrode layer, and are insulated from the upper and lower electrode layers. Accordingly, a plasma display device can be realized which has stability and efficiency of a micro discharge. In addition, each pixel can concurrently carry out a sustain discharge by applying an alternating voltage to upper and lower electrodes forming sustain electrodes.

Plasma Display Panel

Borides in Thin Film Technology

The invention provides spacers for separating and supporting a faceplate structure and a backplate structure in a flat panel display, and methods for fabricating these spacers. Each spacer is typically made of ceramic, such as alumina, containing transition metal oxide, such as titania, chromia or iron oxide. Each spacer can be fabricated with an electrically insulating core and electrically resistive skins. The insulating core can be a wafer formed of ceramic such as alumina, and the resistive skins can be formed by laminating electrically resistive wafers, formed from alumina containing transition metal oxide, to the outside surfaces of the insulating core. Each spacer can also have a core of electrically insulating ceramic composition made of a ceramic containing a transition metal oxide in its higher oxide states, and electrically resistive outside surfaces made of a ceramic containing a transition metal oxide in lower oxide states. Face and/or edge metallization strips can optionally be provided on each spacer.

Spacer structures for use in flat panel displays and methods for forming same

The strain energy densities for various crystalline planes of LiCoO2 were calculated from the stiffness tensors obtained from lattice model calculations using the program GULP. In addition to Coulomb and Buckingham potentials, it was necessary to include shell models for the oxygen and cobalt ions in order to obtain acceptable agreement between the observed and calculated structural parameters and high frequency dielectric constant. The strain energy densities u due to differential thermal expansion were calculated using the theoretical stiffness tensors and estimated values for the thermal expansion coefficients of LiCoO2. For a temperature change of 675 °C, these ranged from 0.5 to 1.3×108 erg/cm3 or 5 to 13 J/m2 for 1-μm-thick films on alumina substrates. In particular, the energies for the (003), (101), and (104) planes were ordered as u(003)≫u(104)>u(101). This suggests that the strong (101) preferred orientation of LiCoO2 films (⩾1 μm thick) is due to the tendency to minimize volume strain energy that arises from differential thermal expansion between the film and the substrate. Additional properties obtained from the GULP calculations include the free energy, heat capacity, and the k=0 vibrational modes.

Lattice model calculation of the strain energy density and other properties of crystalline licoo2

Thin films of LaB6 are prepared by a radio frequency (rf) magnetron sputtering technique. The effect of sputtering conditions on the film properties of internal stress and crystalline orientation are investigated. The film deposited at low pressures (<1 Pa) has a strong compressive stress as high as 109 Pa. As the pressure of Ar discharge gas decreases, the internal stress becomes greater and the preferred orientation is transformed in the sequence: (100)→(110)→(111). This behavior can be explained as an energetically favorable structure of LaB6 film by taking both the surface energy and the strain energy into account. An application of a negative bias (−20 V) to substrates results in a greater stress, so that the (110) and (111) orientation becomes more preferential.

Toshiro Kajiwara

Papers

Structure modification of radio frequency sputtered LaB6 thin films by internal stress

Mechanical and electrical properties of rf sputtered LaB6 thin films on glass substrates

Adhesion measurement of thin films on glass substrates

LaBx thin films prepared by magnetron sputtering

Internal stress and adhesion of r.f.-sputtered MgO films on glass substrates☆