T
Takeshi Saito
Researcher at National Institute of Advanced Industrial Science and Technology
Publications - 231
Citations - 5304
Takeshi Saito is an academic researcher from National Institute of Advanced Industrial Science and Technology. The author has contributed to research in topics: Carbon nanotube & Raman spectroscopy. The author has an hindex of 35, co-authored 225 publications receiving 4796 citations. Previous affiliations of Takeshi Saito include Tokyo Electron & National Presto Industries.
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Aligning single-wall carbon nanotubes with an alternating-current electric field
TL;DR: In this article, single-wall carbon nanotubes (SWCNTs) were highly aligned by an external electric field and the results suggest that the alignment of SWCNT shows significant dependencies on the frequency and the magnitude of the applied electric field.
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Chemical treatment and modification of multi-walled carbon nanotubes
TL;DR: In this article, it was shown that raw multi-walled carbon nanotubes (MWCNTs) can be cut into several hundred nanometer lengths by sonication in mixed acids and the resulting shortened MWCNTs formed a stable dispersion state in the polar solvent without the help of surfactants.
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Selectivity of water-soluble proteins in single-walled carbon nanotube dispersions
TL;DR: Proteins were screened by preparing dispersions of SWNTs to investigate the driving force of the interaction between single-walled carbon nanotubes (SWNTs) of mean diameter 1 nm and water-soluble proteins, and far-UV circular dichroism spectra indicated that the LYS and BSA molecules that coat SWNT surfaces were partially denatured.
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Selective diameter control of single-walled carbon nanotubes in the gas-phase synthesis.
TL;DR: The controlling the flow rate of the ethylene used as a 2nd carbon source can selectively tune the diameter distribution of SWNTs in the gas-phase growth of single-walled carbon nanotubes.
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Semiconductor-enriched single wall carbon nanotube networks applied to field effect transistors
Nicolas Izard,Said Kazaoui,Kenji Hata,Toshiya Okazaki,Takeshi Saito,Sumio Iijima,Nobutsugu Minami +6 more
TL;DR: In this paper, a field effect transistors (FET) consisting of semiconducting single wall carbon nanotubes (s-SWNTs) without detectable traces of metallic nanotsubes and impurities is reported.