Electro-optic modulators translate high-speed electronic signals into the optical domain and are critical components in modern telecommunication networks1,2 and microwave-photonic systems3,4. They are also expected to be building blocks for emerging applications such as quantum photonics5,6 and non-reciprocal optics7,8. All of these applications require chip-scale electro-optic modulators that operate at voltages compatible with complementary metal–oxide–semiconductor (CMOS) technology, have ultra-high electro-optic bandwidths and feature very low optical losses. Integrated modulator platforms based on materials such as silicon, indium phosphide or polymers have not yet been able to meet these requirements simultaneously because of the intrinsic limitations of the materials used. On the other hand, lithium niobate electro-optic modulators, the workhorse of the optoelectronic industry for decades9, have been challenging to integrate on-chip because of difficulties in microstructuring lithium niobate. The current generation of lithium niobate modulators are bulky, expensive, limited in bandwidth and require high drive voltages, and thus are unable to reach the full potential of the material. Here we overcome these limitations and demonstrate monolithically integrated lithium niobate electro-optic modulators that feature a CMOS-compatible drive voltage, support data rates up to 210 gigabits per second and show an on-chip optical loss of less than 0.5 decibels. We achieve this by engineering the microwave and photonic circuits to achieve high electro-optical efficiencies, ultra-low optical losses and group-velocity matching simultaneously. Our scalable modulator devices could provide cost-effective, low-power and ultra-high-speed solutions for next-generation optical communication networks and microwave photonic systems. Furthermore, our approach could lead to large-scale ultra-low-loss photonic circuits that are reconfigurable on a picosecond timescale, enabling a wide range of quantum and classical applications5,10,11 including feed-forward photonic quantum computation. Chip-scale lithium niobate electro-optic modulators that rapidly convert electrical to optical signals and use CMOS-compatible voltages could prove useful in optical communication networks, microwave photonic systems and photonic computation.

Integrated lithium niobate electro-optic modulators operating at CMOS-compatible voltages

Recent advances in photonic integration have propelled microwave photonic technologies to new heights. The ability to interface hybrid material platforms to enhance light–matter interactions has led to the development of ultra-small and high-bandwidth electro-optic modulators, low-noise frequency synthesizers and chip signal processors with orders-of-magnitude enhanced spectral resolution. On the other hand, the maturity of high-volume semiconductor processing has finally enabled the complete integration of light sources, modulators and detectors in a single microwave photonic processor chip and has ushered the creation of a complex signal processor with multifunctionality and reconfigurability similar to electronic devices. Here, we review these recent advances and discuss the impact of these new frontiers for short- and long-term applications in communications and information processing. We also take a look at the future perspectives at the intersection of integrated microwave photonics and other fields including quantum and neuromorphic photonics. This Review discusses recent advances of microwave photonic technologies and their applications in communications and information processing, as well as their potential implementations in quantum and neuromorphic photonics.

Integrated microwave photonics

Optics offers unique opportunities for reducing energy in information processing and communications while simultaneously resolving the problem of interconnect bandwidth density inside machines. Such energy dissipation overall is now at environmentally significant levels; the source of that dissipation is progressively shifting from logic operations to interconnect energies. Without the prospect of substantial reduction in energy per bit communicated, we cannot continue the exponential growth of our use of information. The physics of optics and optoelectronics fundamentally addresses both interconnect energy and bandwidth density, and optics may be the only scalable solution to such problems. Here we summarize the corresponding background, status, opportunities, and research directions for optoelectronic technology and novel optics, including subfemtojoule devices in waveguide and novel two-dimensional (2-D) array optical systems. We compare different approaches to low-energy optoelectronic output devices and their scaling, including lasers, modulators and LEDs, optical confinement approaches (such as resonators) to enhance effects, and the benefits of different material choices, including 2-D materials and other quantum-confined structures. With such optoelectronic energy reductions, and the elimination of line charging dissipation by the use optical connections, the next major interconnect dissipations are in the electronic circuits for receiver amplifiers, timing recovery, and multiplexing. We show we can address these through the integration of photodetectors to reduce or eliminate receiver circuit energies, free-space optics to eliminate the need for timing and multiplexing circuits (while also solving bandwidth density problems), and using optics generally to save power by running large synchronous systems. One target concept is interconnects from ∼1 cm to ∼10 m that have the same energy (∼10 fJ/bit) and simplicity as local electrical wires on chip.

Attojoule Optoelectronics for Low-Energy Information Processing and Communications

Research in photonic computing has flourished due to the proliferation of optoelectronic components on photonic integration platforms. Photonic integrated circuits have enabled ultrafast artificial neural networks, providing a framework for a new class of information processing machines. Algorithms running on such hardware have the potential to address the growing demand for machine learning and artificial intelligence in areas such as medical diagnosis, telecommunications, and high-performance and scientific computing. In parallel, the development of neuromorphic electronics has highlighted challenges in that domain, particularly related to processor latency. Neuromorphic photonics offers sub-nanosecond latencies, providing a complementary opportunity to extend the domain of artificial intelligence. Here, we review recent advances in integrated photonic neuromorphic systems, discuss current and future challenges, and outline the advances in science and technology needed to meet those challenges. Photonics offers an attractive platform for implementing neuromorphic computing due to its low latency, multiplexing capabilities and integrated on-chip technology.

Photonics for artificial intelligence and neuromorphic computing

Research in photonic computing has flourished due to the proliferation of optoelectronic components on photonic integration platforms. Photonic integrated circuits have enabled ultrafast artificial neural networks, providing a framework for a new class of information processing machines. Algorithms running on such hardware have the potential to address the growing demand for machine learning and artificial intelligence, in areas such as medical diagnosis, telecommunications, and high-performance and scientific computing. In parallel, the development of neuromorphic electronics has highlighted challenges in that domain, in particular, related to processor latency. Neuromorphic photonics offers sub-nanosecond latencies, providing a complementary opportunity to extend the domain of artificial intelligence. Here, we review recent advances in integrated photonic neuromorphic systems, discuss current and future challenges, and outline the advances in science and technology needed to meet those challenges.

We fabricate a membrane InP-based electro-absorption modulator (EAM), in which an InGaAsP-based multiple-quantum-well (MQW) absorption region is buried with an InP layer, on Si-waveguide circuits. By optical coupling between the MQW absorption region and Si core, a low-loss and large-absorption-length (300-μm-long) supermode waveguide is designed to suppress electric-field screening at high optical input power. The EAM is fabricated by combining direct bonding of the MQW layer and regrowth of the InP layer on a thin InP template bonded on a silicon-on-insulator wafer. The fabricated membrane EAM shows an on-chip loss of less than 4 dB at wavelengths over 1590 nm and temperatures from 25 to 50 °C. Since the membrane lateral p-i-n diode structure is beneficial for reducing the RC time constant of a lumped-electrode InP-based EAM, the EO bandwidth of the EAM is around 50 GHz without a 50-ohm termination up to fiber-input power of 10 dBm. Using the device, we demonstrate clear eye openings for 56-Gbit/s NRZ and 112-Gbit/s PAM4 signals at temperatures from 25 to 50 °C.

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50-GHz-Bandwidth Membrane InGaAsP Electro-Absorption Modulator on Si Platform

We demonstrate a wafer-level integration of a distributed feedback laser diode (DFB LD) and high-efficiency Mach-Zehnder modulator (MZM) using InGaAsP phase shifters on Si waveguide circuits. The key to integrating materials with different bandgaps is to combine direct wafer bonding of a multiple quantum well layer for the DFB LD and regrowth of a bulk layer for the phase shifter. Buried regrowth of an InP layer is also employed to define the waveguide cores for the LD and phase shifters on a Si substrate. Both the LD and phase shifters have 230-nm-thick lateral diodes, whose thickness is less than the critical thickness of the III-V compound semiconductor layers on the Si substrate. The fabricated device has a 500-µm-long DFB LD and 500-µm-long carrier-depletion InGaAsP-bulk phase shifters, which provide a total footprint of only 1.9 × 0.31 mm2. Thanks to the low losses of the silica-based fiber couplers, InP/Si narrow tapers, and the phase shifters, the fiber-coupled output power of 3.2 mW is achieved with the LD current of 80 mA. The MZM has a VπL of around 0.4 Vcm, which overcomes the VπL limit of typical carrier-depletion Si MZMs. Thanks to the high modulation efficiency, the device shows an extinction ratio of 5 dB for 50-Gbit/s NRZ signal with a low peak-to-peak voltage of 2.5 V, despite the short phase shifters and single-arm driving.

Integration of a high-efficiency Mach-Zehnder modulator with a DFB laser using membrane InP-based devices on a Si photonics platform

PROBLEM TO BE SOLVED: To provide a semiconductor optical device capable of solving such problems that it is important to secure sufficient optical output level for applying the lateral implantation laser to an access system network or a metro network, however, in a conventional lateral implantation laser technique, the maximum optical output level of the lateral implantation laser is still limited to 10 mW or less and thus further enhancement of an optical output is required, and that, in a case of a device having an active layer width of about 2 μm, inductive emission occurs in an area which is about a half of the inside of the active layer, thereby, it is required in the lateral implantation laser to suppress non-uniformity in carrier distribution in an active layerSOLUTION: A semiconductor optical device is so configured as to form an active layer and an embedded waveguide structure on a semiconductor board, subject embedded layers at both sides of the active layer to impurity doping, and laterally inject a current into the active layer, where p-type doping layers are provided on upper and lower sides of the active layer The p-type doping layers are defined as a clad layer or optical carrier confinement layer In the semiconductor optical device, a refraction grating is formed on the surface of the active layer, thereby constructing a distribution feedback type semiconductor laser

Semiconductor optical device

Crystalline thin films of polytetrafluoroethylene (PTFE) were deposited by F/sub 2/ laser (157 nm) ablation in 200 mTorr Ar gas atmosphere. Combining this PTFE thin-film process with CdTe microcrystallites synthesis in sizes of 3-7 nm via KrF laser (248 nm) ablation, CdTe microcrystallites-doped PTFE thin films were fabricated. The X-ray photoemission spectra show that the main architecture of PTFE and CdTe are maintained in the doped films. CdTe microcrystallites doped in PTFE matrix show an absorption edge shift toward higher energy and a third-order optical nonlinearity, which are induced by the quantum size effect. >

F/sub 2/ laser deposition of CdTe microcrystallites-doped fluoropolymer thin films

Ultrashort-distance optical interconnects are becoming increasingly important due to continuous improvements in servers and high-performance computers. As light sources in such interconnects, directly modulated semiconductor lasers with an ultrasmall active region are promising. In addition, using Si waveguides is important to provide low loss optical links with functions such as wavelength filtering and switching. In this paper, we demonstrate a wafer-scale heterogeneous integration of lambda-scale embedded active-region photonic-crystal (LEAP) lasers and Si waveguides, achieved through precise alignment. We numerically and experimentally demonstrated the coupling design between the LEAP lasers and Si waveguides; it is important to match propagation constants of Si waveguides and wavenumber of the optical cavity modes. The LEAP lasers exhibit an ultralow threshold current of 13.2-μA and 10-Gbit/s direct modulation. We also achieved the first data transmission using an optical link consisting of a LEAP laser, Si waveguide, and photodetector and obtained an averaged eye diagram at a bit rate of 10 Gbit/s with a bias current of 150 μA.

Takuro Fujii

Papers

50-GHz-Bandwidth Membrane InGaAsP Electro-Absorption Modulator on Si Platform

Integration of a high-efficiency Mach-Zehnder modulator with a DFB laser using membrane InP-based devices on a Si photonics platform

Semiconductor optical device

F/sub 2/ laser deposition of CdTe microcrystallites-doped fluoropolymer thin films

Optical links on silicon photonic chips using ultralow-power consumption photonic-crystal lasers