T
Takuro Tamura
Researcher at Gunma University
Publications - 16
Citations - 323
Takuro Tamura is an academic researcher from Gunma University. The author has contributed to research in topics: Nanodot & Switching time. The author has an hindex of 9, co-authored 15 publications receiving 303 citations. Previous affiliations of Takuro Tamura include National Institute for Materials Science.
Papers
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Journal ArticleDOI
Rate-Limiting Processes Determining the Switching Time in a Ag2S Atomic Switch
Alpana Nayak,Takuro Tamura,Tohru Tsuruoka,Kazuya Terabe,Sumio Hosaka,Tsuyoshi Hasegawa,Masakazu Aono +6 more
TL;DR: In this paper, the authors investigated the switching time of an Ag2S atomic switch, in which formation and annihilation of a Ag atomic bridge is controlled by a solid-electrochemical reaction in a nanogap between two electrodes, as a function of bias voltage and temperature.
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Ionic-electronic conductor nanostructures: template-confined growth and nonlinear electrical transport.
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Switching Property of Atomic Switch Controlled by Solid Electrochemical Reaction
Takuro Tamura,Takuro Tamura,Tsuyoshi Hasegawa,Kazuya Terabe,Tomonobu Nakayama,Toshitsugu Sakamoto,Hajime Sunamura,Hisao Kawaura,Sumio Hosaka,Masakazu Aono +9 more
TL;DR: In this article, the authors measured the switching time of an atomic switch that is operated by controlling the formation and annihilation of a bridge in a nanogap between two electrodes using solid electrochemical reaction.
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Material dependence of switching speed of atomic switches made from silver sulfide and from copper sulfide
Takuro Tamura,Takuro Tamura,Tsuyoshi Hasegawa,Kazuya Terabe,Tomonobu Nakayama,Toshitsugu Sakamoto,Hiroshi Sunamura,Hisao Kawaura,Sumio Hosaka,Masakazu Aono +9 more
TL;DR: In this paper, the authors developed an atomic switch consisting of an ionic and electronic mixed conductor electrode and a counter metal electrode, having a space of about 1 nm between them.
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Proposal for a memory transistor using phase-change and nanosize effects
TL;DR: In this article, a memory transistor that has two functions of nonvolatile memory action and electron current control (switching) using phase change (PC) and nanometer size effects was proposed.