Many metal–insulator–metal systems show electrically induced resistive switching effects and have therefore been proposed as the basis for future non-volatile memories. They combine the advantages of Flash and DRAM (dynamic random access memories) while avoiding their drawbacks, and they might be highly scalable. Here we propose a coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms. The ion-migration effects are coupled to redox processes which cause the change in resistance. They are subdivided into cation-migration cells, based on the electrochemical growth and dissolution of metallic filaments, and anion-migration cells, typically realized with transition metal oxides as the insulator, in which electronically conducting paths of sub-oxides are formed and removed by local redox processes. From this insight, we take a brief look into molecular switching systems. Finally, we discuss chip architecture and scaling issues.

http://chialvo.org/Curso/UBACurso/DIA7/Papers/Aono_NatMat_07_Ionic%20Switching%20Memory.pdf

Nanoionics-based resistive switching memories

A mean-field phase diagram for conformationally symmetric diblock melts using the standard Gaussian polymer model is presented. Our calculation, which traverses the weak- to strong-segregation regimes, is free of traditional approximations. Regions of stability are determined for disordered (DIS) melts and for ordered structures including lamellae (L), hexagonally packed cylinders (H), body-centered cubic spheres (QIm3m), close-packed spheres (CPS), and the bicontinuous cubic network with Ia3d symmetry (QIa3d). The CPS phase exists in narrow regions along the order−disorder transition for χN ≥ 17.67. Results suggest that the QIa3d phase is not stable above χN ∼ 60. Along the L/QIa3d phase boundaries, a hexagonally perforated lamellar (HPL) phase is found to be nearly stable. Our results for the bicontinuous Pn3m cubic (QPn3m) phase, known as the OBDD, indicate that it is an unstable structure in diblock melts. Earlier approximation schemes used to examine mean-field behavior are reviewed, and compa...

Unifying Weak- and Strong-Segregation Block Copolymer Theories

This review article attempts to provide a comprehensive review of the recent progress in the so-called resistive random access memories (RRAMs) First, a brief introduction is presented to describe the construction and development of RRAMs, their potential for broad applications in the fields of nonvolatile memory, unconventional computing and logic devices, and the focus of research concerning RRAMs over the past decade Second, both inorganic and organic materials used in RRAMs are summarized, and their respective advantages and shortcomings are discussed Third, the important switching mechanisms are discussed in depth and are classified into ion migration, charge trapping/de-trapping, thermochemical reaction, exclusive mechanisms in inorganics, and exclusive mechanisms in organics Fourth, attention is given to the application of RRAMs for data storage, including their current performance, methods for performance enhancement, sneak-path issue and possible solutions, and demonstrations of 2-D and 3-D crossbar arrays Fifth, prospective applications of RRAMs in unconventional computing, as well as logic devices and multi-functionalization of RRAMs, are comprehensively summarized and thoroughly discussed The present review article ends with a short discussion concerning the challenges and future prospects of the RRAMs

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

Memristive devices are promising components for nanoelectronics with applications in nonvolatile memory and storage, defect-tolerant circuitry, and neuromorphic computing. Bipolar resistive switches based on metal oxides such as TiO2 have been identified as memristive devices primarily based on the “pinched hysteresis loop” that is observed in their current-voltage (i-v) characteristics. Here we show that the mathematical definition of a memristive device provides the framework for understanding the physical processes involved in bipolar switching and also yields formulas that can be used to compute and predict important electrical and dynamical properties of the device. We applied an electrical characterization and state-evolution procedure in order to capture the switching dynamics of a device and correlate the response with models for the drift diffusion of ionized dopants (vacancies) in the oxide film. The analysis revealed a notable property of nonlinear memristors: the energy required to switch a me...

http://ftp.aip.org/epaps/j_appl_phys/E-JAPIAU-106-032919/supplemental%20materials.pdf

Switching dynamics in titanium dioxide memristive devices

Memory effects are ubiquitous in nature and are particularly relevant at the nanoscale where the dynamical properties of electrons and ions strongly depend on the history of the system, at least within certain time scales. We review here the memory properties of various materials and systems which appear most strikingly in their non-trivial, time-dependent resistive, capacitative and inductive characteristics. We describe these characteristics within the framework of memristors, memcapacitors and meminductors, namely memory-circuit elements with properties that depend on the history and state of the system. We examine basic issues related to such systems and critically report on both theoretical and experimental progress in understanding their functionalities. We also discuss possible applications of memory effects in various areas of science and technology ranging from digital to analog electronics, biologically inspired circuits and learning. We finally discuss future research opportunities in the field.

Memory effects in complex materials and nanoscale systems

The switching time of a Ag2S atomic switch, in which formation and annihilation of a Ag atomic bridge is controlled by a solid-electrochemical reaction in a nanogap between two electrodes, is investigated as a function of bias voltage and temperature. Increasing the bias voltage decreases the switching time exponentially, with a greater exponent for the lower range of bias than that for the higher range. Furthermore, the switching time shortens exponentially with raising temperature, following the Arrhenius relation with activation energy values of 0.58 and 1.32 eV for lower and higher bias ranges, respectively. These results indicate that there are two main processes which govern the rate of switching, first, the electrochemical reduction Ag+ + e−→Ag and, second, the diffusion of Ag+ ions. This investigation advances the fundamental understanding of the switching mechanism of the atomic switch, which is essential for its successful device application.

Rate-Limiting Processes Determining the Switching Time in a Ag2S Atomic Switch

Ionic-electronic conductor nanostructures: template-confined growth and nonlinear electrical transport.

We measured the switching time of an atomic switch that is operated by controlling the formation and annihilation of an atomic bridge in a nanogap between two electrodes using solid electrochemical reaction. The switching time becomes exponentially shorter with increasing the switching bias voltage. This exponential relation indicates that the switching time is determined by the solid electrochemical reaction, which is supported by theoretical estimation using a simple model. These results suggest the possibility that the atomic switch can be operated as fast as semiconductor devices currently used.

https://iopscience.iop.org/article/10.1143/JJAP.45.L364/pdf

Switching Property of Atomic Switch Controlled by Solid Electrochemical Reaction

We developed an atomic switch consisting of an ionic and electronic mixed conductor electrode and a counter metal electrode, having a space of about 1 nm between them. Formation and annihilation of a conductive atomic bridge is controlled using a solid electrochemical reaction, which is caused by applying a certain bias voltage between the electrodes. In this study, we measured the switching time of atomic switches made of silver sulfide and copper sulfide. The switching times were different, and this difference can be attributed to the different activation energies and chemical potentials of the materials.

http://iopscience.iop.org/article/10.1088/1742-6596/61/1/229/pdf

Takuro Tamura

Papers

Rate-Limiting Processes Determining the Switching Time in a Ag2S Atomic Switch

Ionic-electronic conductor nanostructures: template-confined growth and nonlinear electrical transport.

Switching Property of Atomic Switch Controlled by Solid Electrochemical Reaction

Material dependence of switching speed of atomic switches made from silver sulfide and from copper sulfide

Proposal for a memory transistor using phase-change and nanosize effects