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Takuya Fujimoto

Researcher at Nagoya University

Publications -  13
Citations -  668

Takuya Fujimoto is an academic researcher from Nagoya University. The author has contributed to research in topics: Thin film & Ionic liquid. The author has an hindex of 11, co-authored 12 publications receiving 590 citations.

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Electric-double-layer field-effect transistors with ionic liquids.

TL;DR: This review describes recent developments in the field-effect transistors (FETs) with gate dielectrics of ionic liquids, which have attracted much attention due to their wide electrochemical windows, low vapor pressures, and high chemical and physical stability.
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Ionic-Liquid Component Dependence of Carrier Injection and Mobility for Electric-Double-Layer Organic Thin-Film Transistors

TL;DR: In this article, the performance of the EDL-organic thin film transistors of octathio[8]circulene demonstrates that the transistor carrier mobility shows a linear decrease with an increase in the capacitance of the ionic liquids.
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Molecular, Crystal, and Thin-Film Structures of Octathio[8]circulene: Release of Antiaromatic Molecular Distortion and Lamellar Structure of Self-Assembling Thin Films

TL;DR: The crystal growths and thin-film fabrications of a planar macrocyclic molecule, tetrakis(thiadiazole)porphyrazine, with strong self-assembling capabilities due to electrostatic S···N contacts and p–p interactions are carried out.
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Electrochemical and electrochromic properties of octathio[8]circulene thin films in ionic liquids.

TL;DR: The electrochemistry of the thin films of octathio[8]circulene in an ionic liquid, N,N-diethyl-N-methyl(2-methoxyethyl) ammonium bis(trifluoromethylsulfonyl)imide (DEME-TFSI) shows significant electrochromism.
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Dual-gate field-effect transistors of octathio[8]circulene thin-films with ionic liquid and SiO2 gate dielectrics

TL;DR: Dual-gate organic thin-film transistors (OTFTs) of octathio[8]circulene (1) with ionic liquid and SiO2 gate dielectrics lead to good transistor performance with a high on/off ratio (∼105), a low threshold voltage (∲−5 V), and low sub-threshold slope ( ∼150mV/decade), thus surpassing the performance of the single-gate OTFTs of 1.