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Theoni Alexoudi

Researcher at Aristotle University of Thessaloniki

Publications -  88
Citations -  898

Theoni Alexoudi is an academic researcher from Aristotle University of Thessaloniki. The author has contributed to research in topics: Wavelength-division multiplexing & Silicon photonics. The author has an hindex of 13, co-authored 74 publications receiving 515 citations. Previous affiliations of Theoni Alexoudi include Information Technology Institute & University of Thessaly.

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Optical RAM and integrated optical memories: a survey

TL;DR: State-of-the-art integrated optical memory technologies and optical RAM cell demonstrations describing the physical mechanisms of several key devices along with their performance metrics in terms of their energy, speed and footprint are reviewed.
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Optics in Computing: From Photonic Network-on-Chip to Chip-to-Chip Interconnects and Disintegrated Architectures

TL;DR: It is demonstrated how optically-enabled eight-socket boards can be combined via a 256 × 256 Hipoλaos Optical Packet Switch into a powerful 256-node disaggregated system with less than 335 ns latency, forming a highly promising solution for the latency-critical rack-scale memory disaggregation era.
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III–V-on-Si Photonic Crystal Nanocavity Laser Technology for Optical Static Random Access Memories

TL;DR: In this article, a III-V photonic crystal (PhC) nanocavity, heterogeneously integrated on a silicon-on-insulator platform, is shown to be capable of exhibiting two elementary static random access memory (SRAM) cell functions individually, namely switching and latching operations under a high-speed, bitlevel regime.
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Dual SOA-MZI Wavelength Converters Based on III-V Hybrid Integration on a $\mu{\rm m}$ -Scale Si Platform

TL;DR: In this article, a dual-element optical amplifier-Mach-Zehnder interferometer (SOA-MZI) array hybridly integrated on a 4-μm silicon-on-insulator (SOI) waveguide platform through thermocompression bonding is reported.
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10 Gb/s optical random access memory (RAM) cell

TL;DR: This Letter demonstrates the first all-optical RAM cell that performs both Write and Read functionalities at 10 Gb/s, reporting on a 100% speed increase compared to state-of-the-art optical RAM demonstrations.