T
Thierry Bretagnon
Researcher at University of Montpellier
Publications - 72
Citations - 1938
Thierry Bretagnon is an academic researcher from University of Montpellier. The author has contributed to research in topics: Photoluminescence & Quantum well. The author has an hindex of 26, co-authored 72 publications receiving 1850 citations. Previous affiliations of Thierry Bretagnon include Centre national de la recherche scientifique & University of Winnipeg.
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Journal ArticleDOI
Internal electric field in wurtzite Zn O ∕ Zn 0.78 Mg 0.22 O quantum wells
Christian Morhain,Thierry Bretagnon,Pierre Lefebvre,Xiaodong Tang,Pierre Valvin,Thierry Guillet,Bernard Gil,Thierry Taliercio,M. Teisseire-Doninelli,Borge Vinter,Christiane Deparis +10 more
TL;DR: In this paper, the magnitude of the longitudinal electric field induced by both spontaneous and piezoelectric polarizations was determined by comparing experimental results with a variational calculation of excitonic energies and oscillator strengths.
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Radiative lifetime of a single electron-hole pair in GaN/AlN quantum dots
Thierry Bretagnon,Pierre Lefebvre,Pierre Valvin,Richard Bardoux,Thierry Guillet,Thierry Taliercio,Bernard Gil,Nicolas Grandjean,Fabrice Semond,Benjamin Damilano,Amélie Dussaigne,Jean Massies +11 more
TL;DR: In this paper, the transition energy and the radiative lifetime of Wurtzite GaN/AlN quantum dots (QDs) are studied by time-resolved photoluminescence.
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Polariton lasing in a hybrid bulk ZnO microcavity
Thierry Guillet,Meletios Mexis,Jacques Levrat,Georg Rossbach,Christelle Brimont,Thierry Bretagnon,Bernard Gil,Raphaël Butté,Nicolas Grandjean,Laurent Orosz,François Réveret,Joël Leymarie,Jesús Zúñiga-Pérez,Mathieu Leroux,Fabrice Semond,Sophie Bouchoule +15 more
TL;DR: In this article, the authors demonstrate polariton lasing in a bulk ZnO planar microcavity under non-resonant optical pumping at a small negative detuning (δ ∼ − 1/6 the 130 meV vacuum Rabi splitting) and a temperature of 120 K.
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Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga,In)N/GaN systems
TL;DR: In this article, a model for the radiative recombination of electron-hole pairs in (Ga,In)N/GaN quantum objects, including huge internal electric fields and strong carrier localization, was proposed.
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Confined Excitons in GaN–AlGaN Quantum Wells
TL;DR: In this paper, the original properties of excitons in GaN-AlGaN quantum wells were calculated by a variational approach in the envelope function formalism, showing that the separation of electrons and holes by huge internal electric fields induces an enhanced dependence of exciton binding energy and oscillator strength on the well width.