T
Thomas F. George
Researcher at University of Wisconsin–Stevens Point
Publications - 314
Citations - 4106
Thomas F. George is an academic researcher from University of Wisconsin–Stevens Point. The author has contributed to research in topics: Laser & Excited state. The author has an hindex of 31, co-authored 314 publications receiving 4021 citations. Previous affiliations of Thomas F. George include Russian Academy of Sciences & State University of New York System.
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Enhanced Raman scattering by fractal clusters : scale-invariant theory
TL;DR: The enhancement factor of Raman scattering is shown to scale in terms of a properly chosen spectral variable X and the critical indices of the enhancement factor are found to be determined by the optical spectral dimension of the fractal.
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Laser-induced explosion of gold nanoparticles: potential role for nanophotothermolysis of cancer.
TL;DR: Explosion of nanoparticles may be accompanied by optical plasma, generation of shock waves with supersonic expansion and particle fragmentation with fragments of high kinetic energy, all of which can contribute to the killing of cancer cells.
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The quantum damped harmonic oscillator
TL;DR: In this article, the authors show that the path integral method yields the exact quantum theory of the Caldirola-Kanai Hamiltonian without violation of Heisenberg's uncertainty principle.
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Vibrational motions of buckminsterfullerene
TL;DR: In this paper, a non-Cartesian coordinate system was developed which permits the vibrational motions of Buckminsterfullerene to be expressed in terms of four force constants, and a 180 × 180 matrix was then derived which, when diagonalized, yields the complete vibrational spectrum.
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Thermal oxidation of porous silicon: Study on structure
Andrea Edit Pap,Krisztian Kordas,Geza Toth,J. Levoska,Antti Uusimäki,J. Vähäkangas,Seppo Leppävuori,Thomas F. George +7 more
TL;DR: In this article, the structural changes of porous silicon samples during oxidation are investigated and analyzed using various microscopy techniques and x-ray diffraction, and it is found that the surface roughness of oxidized porous silicon layers increases with the oxidation at 200-400°C and decreases at 600-800°C.