T
Takeo Ohno
Researcher at Oita University
Publications - 53
Citations - 2594
Takeo Ohno is an academic researcher from Oita University. The author has contributed to research in topics: Tunnel junction & Epitaxy. The author has an hindex of 15, co-authored 52 publications receiving 2176 citations. Previous affiliations of Takeo Ohno include National Institute for Materials Science & National Presto Industries.
Papers
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Journal ArticleDOI
Short-term plasticity and long-term potentiation mimicked in single inorganic synapses
Takeo Ohno,Tsuyoshi Hasegawa,Tohru Tsuruoka,Kazuya Terabe,James K. Gimzewski,James K. Gimzewski,Masakazu Aono +6 more
TL;DR: The discovery of a Ag(2)S inorganic synapse is reported, which emulates the synaptic functions of both STP and LTP characteristics through the use of input pulse repetition time and indicates a breakthrough in mimicking synaptic behaviour essential for the further creation of artificial neural systems that emulate characteristics of human memory.
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Learning Abilities Achieved by a Single Solid‐State Atomic Switch
Tsuyoshi Hasegawa,Takeo Ohno,Kazuya Terabe,Tohru Tsuruoka,Tomonobu Nakayama,James K. Gimzewski,Masakazu Aono +6 more
TL;DR: This paper presents a meta-modelling framework for nanoarchitectonics that automates the very labor-intensive and therefore time-heavy and therefore expensive and expensive process of designing materials for nanomaterials engineering.
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Controlling the Synaptic Plasticity of a Cu2S Gap-Type Atomic Switch
Alpana Nayak,Takeo Ohno,Tohru Tsuruoka,Kazuya Terabe,Tsuyoshi Hasegawa,James K. Gimzewski,Masakazu Aono +6 more
TL;DR: The ability to control the plasticity of the Cu2S inorganic synapse justifies its potential as an advanced synthetic synapse with air/temperature sensibility for the development of artificial neural networks.
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First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics
Naoto Umezawa,Kenji Shiraishi,Kenji Shiraishi,Takeo Ohno,Heiji Watanabe,Heiji Watanabe,Toyohiro Chikyow,Kazuyoshi Torii,Kikuo Yamabe,Kikuo Yamabe,Kizuku Yamada,Kizuku Yamada,Hiroshi Kitajima,Tsunetoshi Arikado +13 more
TL;DR: In this paper, the effect of N atoms on the leakage current through HfO2 high-k gate dielectrics has been studied from first-principles calculations within the framework of a generalized gradient approximation (GGA).
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Current-induced magnetization switching using an electrically insulating spin-torque generator
Hongyu An,Takeo Ohno,Takeo Ohno,Yusuke Kanno,Yuito Kageyama,Yasuaki Monnai,Hideyuki Maki,Hideyuki Maki,Ji Shi,Kazuya Ando,Kazuya Ando +10 more
TL;DR: In this article, the spin-orbit torque generated from the Pt oxide can be controlled electrically through voltage-driven oxygen migration, which enables electrical switching of perpendicular magnetization in a ferrimagnet sandwiched by insulating oxides.