T
Tom Mountsier
Researcher at Lam Research
Publications - 19
Citations - 338
Tom Mountsier is an academic researcher from Lam Research. The author has contributed to research in topics: Layer (electronics) & Photolithography. The author has an hindex of 10, co-authored 19 publications receiving 323 citations.
Papers
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Proceedings ArticleDOI
PDL oxide enabled pitch doubling
Nader Shamma,Wen-Ben Chou,Ilia Kalinovski,Don Schlosser,Tom Mountsier,Collin Mui,Raihan Tarafdar,Bart van Schravendijk +7 more
TL;DR: In this article, the results of fabrication of sub-50nm features on a 100nm pitch by the PDL-spacer DP process using 0.85 NA dry ArF lithography are reported.
Journal ArticleDOI
Copper interconnects for semiconductor devices
Sailesh Mansinh Merchant,Seung H. Kang,Mahesh Sanganeria,Bart van Schravendijk,Tom Mountsier +4 more
TL;DR: In this paper, the advantages of transitioning to copper/low-k interconnects are discussed and reliability concerns associated with such devices are highlighted, and the material and process challenges during the fabrication of devices with copper and low-k interfaces are discussed.
Patent
Tungsten barrier and seed for copper filled TSV
TL;DR: In this paper, the tungsten layer serves as a diffusion barrier, a seed layer for copper electrofill and a means of reducing CTE-induced stresses between copper and silicon.
Patent
Applications and methods of making nitrogen-free anti-reflective layers for semiconductor processing
TL;DR: A nitrogen-free anti-reflective layer for use in semiconductor photolithography is fabricated in a chemical vapor deposition process, optionally plasma-enhanced, using a gaseous mixture of carbon, silicon, and oxygen sources.
Patent
Methods for reducing UV and dielectric diffusion barrier interaction
Kaushik Chattopadhyay,Keith Fox,Tom Mountsier,Hui-Jung Wu,Bart van Schravendijk,Kimberly Branshaw +5 more
TL;DR: In this article, the diffusion barrier layer can be made more resistant to UV radiation by thermal, plasma, or UV treatment during or after deposition, and lowering the modulus of diffusion barrier layers can also improve the resistance toUV radiation.