T
Toma Susi
Researcher at University of Vienna
Publications - 144
Citations - 3458
Toma Susi is an academic researcher from University of Vienna. The author has contributed to research in topics: Graphene & Carbon nanotube. The author has an hindex of 30, co-authored 124 publications receiving 2526 citations. Previous affiliations of Toma Susi include Aalto University & Helsinki University of Technology.
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X-ray photoelectron spectroscopy of graphitic carbon nanomaterials doped with heteroatoms.
TL;DR: A practical guide for interpreting X-ray photoelectron spectra of doped graphitic carbon nanomaterials, and a reference for their binding energies that are vital for compositional analysis via XPS are provided.
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Manipulating low-dimensional materials down to the level of single atoms with electron irradiation
TL;DR: It is shown how momentum transfer from the electrons of a 60-keV Ångström-sized STEM probe can be used to move silicon atoms embedded in the graphene lattice with atomic precision.
Journal ArticleDOI
Silicon–Carbon Bond Inversions Driven by 60-keV Electrons in Graphene
Toma Susi,Jani Kotakoski,Jani Kotakoski,Demie Kepaptsoglou,Clemens Mangler,Tracy C. Lovejoy,Ondrej L. Krivanek,Recep Zan,Recep Zan,Ursel Bangert,Ursel Bangert,Paola Ayala,Jannik C. Meyer,Quentin M. Ramasse +13 more
TL;DR: It is demonstrated that 60-keV electron irradiation drives the diffusion of threefold-coordinated Si dopants in graphene by one lattice site at a time, providing a model of nondestructive and atomically precise structural modification and detection for two-dimensional materials.
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Atomistic Description of Electron Beam Damage in Nitrogen-Doped Graphene and Single-Walled Carbon Nanotubes
Toma Susi,Jani Kotakoski,Jani Kotakoski,Raul Arenal,Simon Kurasch,Hua Jiang,Viera Skakalova,Viera Skakalova,Odile Stéphan,Arkady V. Krasheninnikov,Arkady V. Krasheninnikov,Esko I. Kauppinen,Ute Kaiser,Jannik C. Meyer,Jannik C. Meyer +14 more
TL;DR: The results show that the incorporation of nitrogen atoms results in noticeable knock-on damage in these structures already at an acceleration voltage of 80 kV, at which essentially no damage is created in pristine structures at corresponding doses.
Journal ArticleDOI
Electron-Beam Manipulation of Silicon Dopants in Graphene
Mukesh Tripathi,Andreas Mittelberger,Nicholas A. Pike,Clemens Mangler,Jannik C. Meyer,Matthieu J. Verstraete,Jani Kotakoski,Toma Susi +7 more
TL;DR: In this article, the authors demonstrated the direct manipulation of individual atoms in materials using scanning probe microscopy, allowing them to precisely move silicon impurities along an extended path, circulating a single hexagon or back and forth between the two graphene sublattices.