T
Tomohiro Yamaguchi
Researcher at Kogakuin University
Publications - 160
Citations - 3127
Tomohiro Yamaguchi is an academic researcher from Kogakuin University. The author has contributed to research in topics: Molecular beam epitaxy & Band gap. The author has an hindex of 23, co-authored 156 publications receiving 2732 citations. Previous affiliations of Tomohiro Yamaguchi include Seoul National University & Ritsumeikan University.
Papers
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Journal ArticleDOI
RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys
TL;DR: In this paper, a detailed study of RF-MBE growth conditions for obtaining high-quality InN films is presented, showing that the fundamental band gap of InN is about 0.8 eV.
RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys
TL;DR: In this article, a detailed study of RF-MBE growth conditions for obtaining high-quality InN films is presented, and the full widths at half maximum (FWHMs) of ω-mode X-ray diffraction (XRD), ω 2θ mode XRD and E2 (highfrequency)phonon-mode peaks in the Raman scattering spectrum of the grown layer were 236.7 arcsec, 28.9 arcsec and 3.7 cm -1, respectively.
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Valence band ordering in β-Ga2O3 studied by polarized transmittance and reflectance spectroscopy
Takeyoshi Onuma,Takeyoshi Onuma,Shingo Saito,Kohei Sasaki,Tatekazu Masui,Tomohiro Yamaguchi,Tohru Honda,Masataka Higashiwaki +7 more
TL;DR: In this paper, the polarized transmittance and reflectance spectra of β-Ga2O3 crystals are investigated, and the data are interpreted in terms of the monoclinic crystal band structure.
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Correlation between blue luminescence intensity and resistivity in β-Ga2O3 single crystals
Takeyoshi Onuma,Shuhei Fujioka,Tomohiro Yamaguchi,Masataka Higashiwaki,Kohei Sasaki,Tatekazu Masui,Tohru Honda +6 more
TL;DR: In this paper, temperature-dependent cathodoluminescence spectra were measured from (001) unintentionally doped, (100) Si-doped, and (010) Mgdoped β-Ga2O3 substrates prepared by either the floating zone growth or edge-defined film-fed growth methods.
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Polarized Raman spectra in β-Ga2O3 single crystals
Takeyoshi Onuma,Takeyoshi Onuma,Shuhei Fujioka,Tomohiro Yamaguchi,Y. Itoh,Masataka Higashiwaki,Kohei Sasaki,Tatekazu Masui,Tohru Honda +8 more
TL;DR: In this paper, a complete set of polarized Raman spectra of β-Ga 2 O 3 was measured from (010) Mg-doped, (100) Si-doping, and (001) unintentionally-labeled β-ga 2 O3 substrates prepared by either the floating zone growth or edge-defined film-fed growth methods.