T
Tohru Honda
Researcher at Kogakuin University
Publications - 118
Citations - 1560
Tohru Honda is an academic researcher from Kogakuin University. The author has contributed to research in topics: Molecular beam epitaxy & Cathodoluminescence. The author has an hindex of 16, co-authored 114 publications receiving 1222 citations.
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Journal ArticleDOI
Valence band ordering in β-Ga2O3 studied by polarized transmittance and reflectance spectroscopy
Takeyoshi Onuma,Takeyoshi Onuma,Shingo Saito,Kohei Sasaki,Tatekazu Masui,Tomohiro Yamaguchi,Tohru Honda,Masataka Higashiwaki +7 more
TL;DR: In this paper, the polarized transmittance and reflectance spectra of β-Ga2O3 crystals are investigated, and the data are interpreted in terms of the monoclinic crystal band structure.
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Correlation between blue luminescence intensity and resistivity in β-Ga2O3 single crystals
Takeyoshi Onuma,Shuhei Fujioka,Tomohiro Yamaguchi,Masataka Higashiwaki,Kohei Sasaki,Tatekazu Masui,Tohru Honda +6 more
TL;DR: In this paper, temperature-dependent cathodoluminescence spectra were measured from (001) unintentionally doped, (100) Si-doped, and (010) Mgdoped β-Ga2O3 substrates prepared by either the floating zone growth or edge-defined film-fed growth methods.
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Polarized Raman spectra in β-Ga2O3 single crystals
Takeyoshi Onuma,Takeyoshi Onuma,Shuhei Fujioka,Tomohiro Yamaguchi,Y. Itoh,Masataka Higashiwaki,Kohei Sasaki,Tatekazu Masui,Tohru Honda +8 more
TL;DR: In this paper, a complete set of polarized Raman spectra of β-Ga 2 O 3 was measured from (010) Mg-doped, (100) Si-doping, and (001) unintentionally-labeled β-ga 2 O3 substrates prepared by either the floating zone growth or edge-defined film-fed growth methods.
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Modeling and interpretation of UV and blue luminescence intensity in β-Ga2O3 by silicon and nitrogen doping
Takeyoshi Onuma,Takeyoshi Onuma,Yoshiaki Nakata,Kohei Sasaki,Takekazu Masui,Tomohiro Yamaguchi,Tohru Honda,Akito Kuramata,S. Yamakoshi,Masataka Higashiwaki +9 more
TL;DR: In this paper, temperature-dependent cathodoluminescence spectra of Si-doped β-Ga2O3 single crystals and Ndoped epitaxial films were comprehensively shown to investigate their electronic structure and defect states.
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Temperature-dependent exciton resonance energies and their correlation with IR-active optical phonon modes in β-Ga2O3 single crystals
Takeyoshi Onuma,Takeyoshi Onuma,Shingo Saito,Kohei Sasaki,Ken Goto,Tatekazu Masui,Tomohiro Yamaguchi,Tohru Honda,Akito Kuramata,Masataka Higashiwaki +9 more
TL;DR: In this paper, the temperature-dependent exciton resonance energies in β-Ga2O3 single crystals were studied by using polarized reflectance measurement and the Eexciton values exhibited large energy changes in the range of 179-268'meV from 5 to 300'k.