Tomonori Nishimoto

TL;DR: The contribution of higher-silane related reactive species (HSRS) during film growth is suggested as a key event to increase the degree of photo-induced degradation in the resulting a-Si:H through an incorporation of excess Si-H 2 bonds in the network as far as the substrate temperature is kept constant.

TL;DR: In this article, the electron temperature in a silane glow-discharge plasma was measured by an optical-emission spectroscopy and it was shown that the electron-attachment process to higher-order silane molecules whose formation reactions show negative activation energies with gas temperature and are also suppressed by the presence of hydrogen molecules.

TL;DR: In this paper, a series of investigations was performed to improve stabilized efficiency of hydrogenated amorphous silicon (a-Si:H) solar cells deposited at a high growth rate of 15-20 A/s by the plasma-enhanced chemical vapor deposition method.

TL;DR: Guiding principles for preparing stabilized hydrogenated amorphous silicon thin films (a-Si:H) from silane glow-discharge plasmas are proposed in this paper, where higher order silane related chemical species (HSRS) are suggested as species responsible for modifying the network structure in a resulting film, leading to photo-induced degradation.

TL;DR: In this article, the anomalous behavior of electron temperature in SiH4 glow-discharge plasmas has been explained in terms of feed-back phenomenon in the plasma, starting from an electron-attachment event to higher silane molecules produced in the plasmatic medium, causing an increase in electron temperature due to an increase of electron-loss rate, followed by an enhanced production of higher Silane molecules.