Showing papers by "Toru Takayama published in 2000"
Patent•
29 Mar 2000
TL;DR: In this paper, a three or more layered structure, consisting of a thin-film layer consisting of oxidation resistant metal, a thinfilm layer formed thereon and consisting of or essentially of aluminum and 9 thin- film layer consisting thereon, was used for transparent electrode material, after the wiring is formed, an oxygen plasma treating method and a thermal oxidation treating method were used.
Abstract: PROBLEM TO BE SOLVED: To enhance operational characteristics and reliability of a semiconductor device, and to realize the improvement of a yield by suppressing the generation of corrosion which is called electric corrosion at the time of forming a metal wiring and a transparent electrode. SOLUTION: A wiring material has a three or more layered structure, consisting of a thin-film layer consisting of oxidation resistant metal, a thin-film layer formed thereon and consisting of or essentially of aluminum and 9 thin- film layer formed thereon and consisting of oxidation resistant metal and metal oxide is used for transparent electrode material. After the wiring is formed, an oxygen plasma treating method and a thermal oxidation treating method are used. COPYRIGHT: (C)2001,JPO
10 citations
Patent•
28 Jun 2000
TL;DR: In this paper, a high degree of purity is used, a unitary argon gas (Ar) is used as a sputter gas, the temperature of a substrate is set to 300°C or less, sputter power was set to 1.0 to 9 kW, and the pressure of the gas was increased to 1 to 3.0 Pa, thus setting the stress of a film to -1×1010 to 1× 1010 dyn/cm2.
Abstract: PROBLEM TO BE SOLVED: To provide a highly reliable electrooptical device and its manufacturing method using a material having sufficiently low electric resistivity and high heat resistance as the wiring or electrode of each circuit of the electrooptical device represented by an AM-LCD. SOLUTION: A target with a high degree of purity is used, a unitary argon gas (Ar) is used as a sputter gas, the temperature of a substrate is set to 300°C or less, sputter power is set to 1 to 9 kW, and the pressure of the sputter gas is set to 1.0 to 3.0 Pa, thus setting the stress of a film to -1×1010 to 1×1010 dyn/cm2. Using a conductive film where sodium contained in the film is set to 0.03 ppm or less (preferably, 0.01 ppm or less) and at the same time an electric resistance rate is set to 40 μΩcm or less as the gate wiring material of TFT and other wiring materials, the operation performance and reliability of the semiconductor device with TFT can be improved greatly. COPYRIGHT: (C)2002,JPO
9 citations
Patent•
29 Jun 2000
TL;DR: In this paper, an amorphous silicon film is formed above the surface of an insulating layer through a CVD method, hydrogen contained in the amorphus is eliminated through heating, and then it is irradiated with an Nd:YAG laser to turn crystalline.
Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin-film transistor, provided with a channel forming region formed of crystalline silicone. SOLUTION: This manufacturing method is carried out in such a manner that an amorphous silicon film is formed above the surface of an insulating layer through a CVD method, hydrogen contained in the amorphous silicon film is eliminated through heating, and the amorphous silicon film is irradiated with an Nd:YAG laser to turn crystalline. The crystallized silicon film is patterned and doped with impurities to form a low-concentration region, a source region, and a drain region.
1 citations
Patent•
16 Oct 2000
TL;DR: In this article, the authors proposed a method to reduce the crystallizing time of amorphous silicon by lowering the crystallising temperature of the amorphus and another method by which a thin-film transistor is manufactured by using the method.
Abstract: PURPOSE: To provide a method by which the crystallizing time of amorphous silicon is reduced by lowering the crystallizing temperature of the amorphous silicon and another method by which a thin film transistor is manufactured by using the method. CONSTITUTION: After depositing a base insulating film (e.g. silicon oxide film 22), the insulating film is subjected to plasma treatment by exposing the film to a plasma atmosphere, and then, an amorphous silicon film 25 is deposited and the amorphous silicon is crystallized at 400-600°C. In addition, a part 26 having excellent crystallinity is arbitrary formed by selectively exposing the film 25 to the plasma atmosphere so as to control the part where a crystal core is produced. The semiconductor thus manufactured is used for a thin film transistor.