Showing papers by "Toru Takayama published in 2011"
Patent•
19 Jul 2011
TL;DR: In this article, a method for manufacturing a thin-film transistor which enables heat treatment aimed at improving characteristics of a gate insulating film such as lowering of an interface level or reduction in a fixed charge without causing a problem of misalignment in patterning due to expansion or shrinkage of glass.
Abstract: An object of the present invention is to provide a method for manufacturing a thin film transistor which enables heat treatment aimed at improving characteristics of a gate insulating film such as lowering of an interface level or reduction in a fixed charge without causing a problem of misalignment in patterning due to expansion or shrinkage of glass. A method for manufacturing a thin film transistor of the present invention comprises the steps of heat-treating in a state where at least a gate insulating film is formed over a semiconductor film on which element isolation is not performed, simultaneously isolating the gate insulating film and the semiconductor film into an element structure, forming an insulating film covering a side face of an exposed semiconductor film, thereby preventing a short-circuit between the semiconductor film and a gate electrode. Expansion or shrinkage of a glass substrate during the heat treatment can be prevented from affecting misalignment in patterning since the gate insulating film and the semiconductor film are simultaneously processed into element shapes after the heat treatment.
17 citations
Patent•
17 Mar 2011
TL;DR: In this paper, a micro-crystalline semiconductor film is deposited on the yttria-stabilized zirconia, so that the micro-cell around an interface with a base particularly has favorable crystallinity while by crystallinity of the base.
Abstract: An object is to provide a semiconductor device including a microcrystalline semiconductor film with favorable quality and a method for manufacturing the semiconductor device. In a thin film transistor formed using a microcrystalline semiconductor film, yttria-stabilized zirconia having a fluorite structure is formed in the uppermost layer of a gate insulating film in order to improve quality of a microcrystalline semiconductor film to be formed in the initial stage of deposition. The microcrystalline semiconductor film is deposited on the yttria-stabilized zirconia, so that the microcrystalline semiconductor film around an interface with a base particularly has favorable crystallinity while by crystallinity of the base.
1 citations
Patent•
23 May 2011
TL;DR: In this paper, a cleaning method of removing a vapor deposition material adhering to components in a film forming chamber without releasing the vapor deposition materials to the atmosphere was proposed, which can be used to shorten the manufacturing process of an electro-optical device.
Abstract: PROBLEM TO BE SOLVED: To provide a cleaning method of removing a vapor deposition material adhering to components in a film forming chamber without releasing the vapor deposition material to the atmosphere.SOLUTION: A vapor-deposition material 111 adhering to components such as a substrate holder 102, a vapor-deposition mask 104, a mask holder 104, or an adhesion preventing shield 106 provided in a film-forming chamber 101 is subjected to heat treatment. Because of this, the adhering vapor-deposition material 111 is re-sublimated, and removed by exhaust through a vacuum pump. By including such a cleaning method in the steps of manufacturing an electro-optical device, the manufacturing steps are shortened, and an electro-optical device with high reliability can be realized.
Patent•
03 Jan 2011
TL;DR: In this paper, a gate insulating film of cure and high quality was applied to a field effect type transistor with channel length from 0.35 to 2.5 μm.
Abstract: An object of the present invention is to apply an insulating film of cure and high quality that is suitably applicable as gate insulating film and protective film to a technique that the insulating film is formed on the glass substrate under a temperature of strain point or lower, and to a semiconductor device realizing high efficiency and high reliability by using it. In a semiconductor device of the present invention, a gate insulating film of a field effect type transistor with channel length of from 0.35 to 2.5 μm in which a silicon nitride film is formed over a crystalline semiconductor film through a silicon oxide film, wherein the silicon nitride film contains hydrogen with the concentration of 1×10 21 /cm 3 or less and has characteristic of an etching rate of 10 nm/min or less with respect to mixed solution containing an ammonium hydrogen fluoride (NH 4 HF 2 ) of 7.13% and an ammonium fluoride (NH 4 F) of 15.4%.