T
Tsutomu Iida
Researcher at Tokyo University of Science
Publications - 144
Citations - 1843
Tsutomu Iida is an academic researcher from Tokyo University of Science. The author has contributed to research in topics: Thermoelectric effect & Seebeck coefficient. The author has an hindex of 20, co-authored 138 publications receiving 1646 citations.
Papers
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Journal ArticleDOI
The thermoelectric properties of bulk crystalline n- and p-type Mg2Si prepared by the vertical Bridgman method
Masayasu Akasaka,Tsutomu Iida,Atsunobu Matsumoto,Kohei Yamanaka,Yoshifumi Takanashi,Tomohiro Imai,Noriaki Hamada +6 more
TL;DR: In this paper, the authors used glow discharge mass spectrometry (GDMS) to investigate residual impurities and process induced contaminants in bulk Mg2Si crystals grown using the vertical Bridgman melt growth method.
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Thermoelectric Characteristics of a Commercialized Mg2Si Source Doped with Al, Bi, Ag, and Cu
Tatsuya Sakamoto,Tsutomu Iida,Atsunobu Matsumoto,Yasuhiko Honda,Takashi Nemoto,Junichi Sato,Tadao Nakajima,Hirohisa Taguchi,Yoshifumi Takanashi +8 more
TL;DR: In this paper, the thermoelectric properties of commercial polycrystalline Mg2Si doped with Bi, Al+Al-co-doped samples were compared with values calculated using ABCAP based on a full-potential augmented-plane-wave (FLAPW) band-structure calculation in a local density approximation.
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Design of segmented thermoelectric generator based on cost-effective and light-weight thermoelectric alloys
TL;DR: In this paper, a segmented thermoelectric (TE) generator was designed with higher temperature segments composed of n-type Mg 2 Si and p-type higher manganese silicide (HMS) and lower temperature segments consisting of n and p type Bi-Te based compounds.
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Non-wetting crystal growth of Mg2Si by vertical Bridgman method and thermoelectric characteristics
Masayasu Akasaka,Tsutomu Iida,Takashi Nemoto,Junichi Soga,Junichi Sato,Kenichiro Makino,Masataka Fukano,Yoshifumi Takanashi +7 more
TL;DR: In this paper, a single phase of polycrystalline Mg 2 Si was grown using the vertical Bridgman method in a nonwetting growth environment, achieved by the use of an anti-adhesion coating on the crucible wall.
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Bulk crystal growth of Mg2Si by the vertical Bridgman method
TL;DR: In this paper, the vertical Bridgman (VB) method was used to grow Mg2Si in crucibles made of chemical vapor deposition (CVD) pyrolytic graphite (PG) in order to minimize the reaction and sticking of molten Mg-Si during growth.