Showing papers by "Tsutomu Uesugi published in 2010"
01 Dec 2010
TL;DR: In this article, the authors review the role of the power switching devices in hybrid electric vehicles and pure electric vehicles (EVs) and the required device characteristics, and the recent status of SiC and GaN power devices.
Abstract: A power switching device is one of the key elements to determine the performance of hybrid electric vehicles (HEVs) and pure electric vehicles (EVs). Recently, the power devices using wide-bandgap semiconductors, such as SiC and GaN, have been intensively developed for the future HEVs and EVs. In this paper, we review a role of the power devices in these automotive systems, the required device characteristics, and the recent status of SiC and GaN power devices.
39 citations
TL;DR: In this paper, a novel highvoltage vertical GaN MOS-controlled High Electron Mobility Transistor (HEMT) with epitaxially grown thin p type body and terrace gate structure is presented, with projected maximum breakdown voltage of 1289 V, Ron,sp of 1.9 mΩ-cm2, and switching power loss of 34.9 μJ/cm2 and 2.60 μJ /cm2 for drain and gate respectively.
Abstract: The design, simulations and optimization of a novel high-voltage vertical GaN MOS-controlled High Electron Mobility Transistor (HEMT) with epitaxially grown thin p type body and terrace gate structure is presented, with projected maximum breakdown voltage of 1289 V, Ron,sp of 1.9 mΩ-cm2, and switching power loss of 34.9 μJ/cm2 and 2.60 μJ/cm2 for drain and gate respectively. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
5 citations
Patent•
04 Nov 2010
TL;DR: In this article, the Schottky barrier diode 10 has: first semiconductor layers 14, 16 of a first conductivity type; an ohmic electrode 40 ohmic-connected to the first semiconductors layers 14 and 16; a Schottiness electrode 30 Schotthips-joined to the second semiconductor layer 20 hetero-junction.
Abstract: PROBLEM TO BE SOLVED: To provide a Schottky barrier diode in which a leak current hardly occurs in application of a reverse voltage and an on-voltage is low. SOLUTION: The Schottky barrier diode 10 has: first semiconductor layers 14, 16 of a first conductivity-type; an ohmic electrode 40 ohmic-connected to the first semiconductor layers 14, 16; a Schottky electrode 30 Schottky-joined to the first semiconductor layers 14, 16; and a second conductivity-type second semiconductor layer 20 hetero-junction to the first semiconductors 14, 16 in a region adjacent to a region Schottky-joined to the Schottky electrode 30. COPYRIGHT: (C)2011,JPO&INPIT
1 citations