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Masahiro Sugimoto
Researcher at Toyota
Publications - 54
Citations - 722
Masahiro Sugimoto is an academic researcher from Toyota. The author has contributed to research in topics: Layer (electronics) & Semiconductor device. The author has an hindex of 9, co-authored 51 publications receiving 672 citations.
Papers
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Journal ArticleDOI
GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching
Masahito Kodama,Masahiro Sugimoto,Eiko Hayashi,Narumasa Soejima,Osamu Ishiguro,Masakazu Kanechika,Kenji Itoh,Hiroyuki Ueda,Tsutomu Uesugi,Tetsu Kachi +9 more
TL;DR: In this article, a novel method for fabricating trench structures on GaN was developed and a smooth non-polar (1100) plane was obtained by wet etching using tetramethylammonium hydroxide (TMAH) as the etchant.
Journal ArticleDOI
A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor
Masakazu Kanechika,Masahiro Sugimoto,Narumasa Soejima,Hiroyuki Ueda,Osamu Ishiguro,Masahito Kodama,Eiko Hayashi,Kenji Itoh,Tsutomu Uesugi,Tetsu Kachi +9 more
TL;DR: In this article, a vertical insulated gate AlGaN/GaN heterojunction field effect transistor (HFET) was fabricated using a free-standing GaN substrate, which exhibited a specific on-resistance of as low as 2.6 mΩ·cm2 with a threshold voltage of -16 V.
Patent
Iii-v hemt devices
Masahiro Sugimoto,Tetsu Kachi,Yoshitaka Nakano,Tsutomu Uesugi,Hiroyuki Ueda,Narumasa Soejima +5 more
TL;DR: In this paper, the authors proposed a III-V semiconductor device with a gate electrode formed at the top surface side of the AlGaN layer 34, which has a band gap of 1.5x1017cm-3.
Journal ArticleDOI
Study of etching-induced damage in GaN by hard X-ray photoelectron spectroscopy
Tetsuo Narita,Daigo Kikuta,Naoko Takahashi,Keita Kataoka,Yasuji Kimoto,Tsutomu Uesugi,Tetsu Kachi,Masahiro Sugimoto +7 more
TL;DR: In this article, the authors carried out nondestructive measurements of the depth profile of etching-induced damage in p-type gallium nitride (p-GaN), in particular surface band bending, using Hard X-ray Photoelectron Spectroscopy (HAX-PES).
Patent
Semiconductor devices and method of manufacturing them
TL;DR: In this article, a semiconductor device is provided with a drain electrode 22, a base plate 32, an electric current regulation layer 42 covering a part of a surface of the semiconductor base plate and leaving a non-covered surface at the surface of a sink.