T
Tsuyoshi Moriya
Researcher at Tokyo Electron
Publications - 162
Citations - 1591
Tsuyoshi Moriya is an academic researcher from Tokyo Electron. The author has contributed to research in topics: Substrate (printing) & Particle. The author has an hindex of 20, co-authored 159 publications receiving 1545 citations. Previous affiliations of Tsuyoshi Moriya include NEC.
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Patent
Atmospheric transfer chamber, processed object transfer method, program for performing the transfer method, and storage medium storing the program
TL;DR: In this paper, an atmospheric transfer chamber is connected to an object processing chamber for processing a target object by using a plasma of a halogen-based gas, for transferring the target object therein.
Patent
Substrate transfer mechanism and subtrate transfer apparatus including same, particle removal method for the subtrate transfer mechanism and apparatus, program for executing the method, and storage medium for storing the program
TL;DR: In this article, a substrate transfer mechanism for transferring a substrate includes a mounting table on which the substrate is mounted; an arm member connected to the mounting table and moving it; and a temperature control unit.
Patent
Particle-removing apparatus for a semiconductor device manufacturing apparatus and method of removing particles
TL;DR: In a semiconductor device, positively charged particles are trapped or guided at the instant that the cathode voltage is stopped, by an electrode to which is imparted a negative voltage, so as to prevent particles reaching the substrate as discussed by the authors.
Patent
Internal member of a plasma processing vessel
TL;DR: An internal member of a plasma processing vessel includes a base material and a film formed by thermal spraying of ceramic on a surface of the base material, which includes at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd as mentioned in this paper.
Journal ArticleDOI
Reduction of Particle Contamination in Plasma-Etching Equipment by Dehydration of Chamber Wall
TL;DR: In this paper, the mechanism of particle generation is investigated in order to prevent defects formed on wafers in the plasma etching of multi-layered films composed of tungsten silicide (WSi) and polycrystalline silicon (poly-Si).