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Fumihiko Uesugi

Researcher at National Institute for Materials Science

Publications -  46
Citations -  495

Fumihiko Uesugi is an academic researcher from National Institute for Materials Science. The author has contributed to research in topics: Plasma etching & Reactive-ion etching. The author has an hindex of 11, co-authored 46 publications receiving 407 citations. Previous affiliations of Fumihiko Uesugi include National Institute of Advanced Industrial Science and Technology & Saga Group.

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Reduction of Particle Contamination in Plasma-Etching Equipment by Dehydration of Chamber Wall

TL;DR: In this paper, the mechanism of particle generation is investigated in order to prevent defects formed on wafers in the plasma etching of multi-layered films composed of tungsten silicide (WSi) and polycrystalline silicon (poly-Si).
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Real-time monitoring of scattered laser light by a single particle of several tens of nanometers in the etching chamber in relation to its status with the equipment

TL;DR: In this paper, a scattered laser light measurement system was used to detect a single particle of several tens of nanometers and to clarify the relationship between particle outbreak and the workings of wafer processing equipment.
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Observation of the trajectories of particles in process equipment by an in situ monitoring system using a laser light scattering method

TL;DR: In this article, an in situ scattered laser light measurement system, which can detect individual particles and observe their trajectories, has been produced experimentally and has been used with tungsten (W) etchback reactive ion etching (RIE) equipment.
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Generation of positively charged particles at an anode and transport to device wafers in a real radio frequency plasma etching chamber for tungsten etch-back process

TL;DR: The transport path of particles that have flaked off a grounded anode of a real parallel-plate radio frequency (RF) plasma etching equipment for tungsten etch-back processing to device wafers on the cathode is measured by using an in situ monitoring system that measures laser light scattered by the particles as discussed by the authors.
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Metamorphic GaAs/GaAsBi Heterostructured Nanowires

TL;DR: The existence of localized states energetically and spatially dispersed throughout the NW are indicated from the low temperature cathodoluminescent spectra and images, resulting in the observed luminescence spectra characterized by large line widths at low temperatures as well as by the appearance of multiple peaks at high temperatures and for high excitation powers.