U
Udo Römer
Researcher at University of New South Wales
Publications - 32
Citations - 863
Udo Römer is an academic researcher from University of New South Wales. The author has contributed to research in topics: Solar cell & Monocrystalline silicon. The author has an hindex of 11, co-authored 29 publications receiving 714 citations.
Papers
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Journal ArticleDOI
Recombination behavior and contact resistance of n+ and p+ poly-crystalline Si/mono-crystalline Si junctions
Udo Römer,Robby Peibst,Tobias Ohrdes,Bianca Lim,Jan Krügener,Eberhard Bugiel,Tobias Wietler,Rolf Brendel +7 more
TL;DR: In this paper, the authors investigated the electrical properties of poly-crystalline (poly) Si/mono-c-Si junctions and the influence of the interfacial oxide between the poly-Si and the c-Si on these characteristics.
Journal ArticleDOI
Working principle of carrier selective poly-Si/c-Si junctions: Is tunnelling the whole story?
Robby Peibst,Udo Römer,Yevgeniya Larionova,Michael Rienäcker,Agnes Merkle,Nils Folchert,Sina Reiter,Mircea Turcu,B. Min,Jan Krügener,D. Tetzlaff,Eberhard Bugiel,Tobias Wietler,Rolf Brendel +13 more
TL;DR: In this article, the authors present an alternative picture, essentially based on a localized current flow through the interfacial oxide, mediated either by local reduction of the oxide layer thickness or by pinholes.
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Ion Implantation for Poly-Si Passivated Back-Junction Back-Contacted Solar Cells
TL;DR: In this article, the concept of counterdoping was investigated for patterned doping of back-junction back-contacted solar cells with polycrystalline-monocrystalline Si junctions.
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Junction Resistivity of Carrier-Selective Polysilicon on Oxide Junctions and Its Impact on Solar Cell Performance
Michael Rienäcker,Marcel Bossmeyer,Agnes Merkle,Udo Römer,Felix Haase,Jan Krügener,Rolf Brendel,Robby Peibst +7 more
TL;DR: In this paper, the junction resistivity of high quality carrier-selective polysilicon on oxide (POLO) junctions with the transfer length method was investigated and a back-junction back-contact solar cell with p-type and n-type POLO junctions was demonstrated.
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A Simple Model Describing the Symmetric $I\hbox{--}V$ Characteristics of $\hbox{p}$ Polycrystalline Si/ $\hbox{n}$ Monocrystalline Si, and $\hbox{n}$ Polycrystalline Si/ $\hbox{p}$ Monocrystalline Si Junctions
Robby Peibst,Udo Römer,K. R. Hofmann,Bianca Lim,Tobias Wietler,Jan Krügener,Nils-Peter Harder,Rolf Brendel +7 more
TL;DR: In this article, an analytical model for the current transport in polycrystalline (poly)Si/interfacial oxide/monocrystalline(c)-Si base junctions is presented.