R
Rolf Brendel
Researcher at Leibniz University of Hanover
Publications - 413
Citations - 10921
Rolf Brendel is an academic researcher from Leibniz University of Hanover. The author has contributed to research in topics: Silicon & Passivation. The author has an hindex of 49, co-authored 397 publications receiving 9454 citations.
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Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3
TL;DR: In this paper, an atomic layer-deposited aluminium oxide (Al2O3) is applied as rear surface-passivating dielectric layer to passivated emitter and rear cell (PERC)-type crystalline silicon (c-Si) solar cells.
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Laser contact openings for local poly-Si-metal contacts enabling 26.1%-efficient POLO-IBC solar cells
Felix Haase,Christina Hollemann,Sören Schäfer,Agnes Merkle,Michael Rienäcker,Jan Krügener,Rolf Brendel,Robby Peibst +7 more
TL;DR: In this article, the authors demonstrate damage-free laser contact openings in silicon oxide layers on polycrystalline silicon on oxide (POLO) passivating contacts with a pulsed UV-laser.
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19%‐efficient and 43 µm‐thick crystalline Si solar cell from layer transfer using porous silicon
TL;DR: In this article, the authors presented a both-sides-contacted thin-film crystalline silicon (c-Si) solar cell with a confirmed AM1.5 efficiency of 19.1% using the porous silicon layer transfer process.
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Surface passivation of crystalline silicon solar cells: Present and future
TL;DR: In this paper, the authors focus on the future developments in the field of c-Si solar cells based on carrier-selective passivation layers and compare combinations of the various options of carrierselective layers concerning their combined selectivities and efficiency potentials.
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Electronic and chemical properties of the c-Si/Al2O3 interface
Florian Werner,Boris Veith,Dimitri Zielke,Lisa Kühnemund,Christoph Tegenkamp,Michael Seibt,Rolf Brendel,Jan Schmidt +7 more
TL;DR: In this article, the dominant passivation mechanisms at the c-Si/Al2O3 interface, as well as the chemical composition of the interface region, are investigated using aluminum oxide films deposited by atomic layer deposition (ALD).