scispace - formally typeset
V

V. Kessler

Researcher at University of Duisburg-Essen

Publications -  9
Citations -  213

V. Kessler is an academic researcher from University of Duisburg-Essen. The author has contributed to research in topics: Silicon & Thermoelectric effect. The author has an hindex of 8, co-authored 9 publications receiving 190 citations.

Papers
More filters
Journal ArticleDOI

Role of oxygen on microstructure and thermoelectric properties of silicon nanocomposites

TL;DR: In this article, the role of oxygen on microstructure and transport properties of the nanocomposite was investigated using a focused ion beam (FIB) and transmission electron microscopy (TEM).
Journal ArticleDOI

High Temperature Thermoelectric Device Concept Using Large Area PN Junctions

TL;DR: In this paper, a high temperature thermoelectric device concept using large area nanostructured silicon p-type and n-type (PN) junctions is presented, where the electrical contacts are made at the cold side eliminating the hot side substrate and difficulties that go along with high temperature electrical contacts.
Journal ArticleDOI

Thermoelectric Properties of Nanocrystalline Silicon from a Scaled-Up Synthesis Plant†

TL;DR: In this article, the authors present the properties of thermoelectrics made from highly boron doped silicon nanoparticles, which are produced by a continuous gas phase process in a scaled-up synthesis plant enabling production rates in the kg'h−1 regime.
Journal ArticleDOI

Silicon‐based nanocomposites for thermoelectric application

TL;DR: In this paper, a gas phase synthesis for the nanoparticles is employed, which is capable of producing doped silicon (Si) nanoparticles, doped alloy nanoparticles of silicon and germanium (Ge), SixGe1-x, and doped composites of Si nanoparticles with embedded metal silicide precipitation phases.
Journal ArticleDOI

Fabrication of High-Temperature-Stable Thermoelectric Generator Modules Based on Nanocrystalline Silicon

TL;DR: In this paper, high-temperature-stable thermoelectric generator modules (TGMs) based on nanocrystalline silicon have been fabricated, characterized by the Harman technique, and measured in a generator test facility at the German Aerospace Center.