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Valeriy B. Kudryavtsev

Researcher at LSI Corporation

Publications -  18
Citations -  835

Valeriy B. Kudryavtsev is an academic researcher from LSI Corporation. The author has contributed to research in topics: Integrated circuit & Transistor. The author has an hindex of 12, co-authored 18 publications receiving 835 citations.

Papers
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Patent

Hexagonal field programmable gate array architecture

TL;DR: In this article, a tri-directional three-layer metal routing is proposed for hexagonal-shaped cells, where the conductors for interconnecting terminals of microelectronic cells of an integrated circuit prefer to be angularly displaced from each other.
Patent

Transistors having dynamically adjustable characteristics

TL;DR: In this paper, a tri-directional three-layer metal routing is proposed for hexagonal-shaped cells, where the conductors for interconnecting terminals of microelectronic cells of an integrated circuit are preferrably formed in three different layers.
Patent

Microelectronic integrated circuit including triangular CMOS "nand" gate device

TL;DR: In this paper, the power supply connections and the selection of conductivity type (NMOS or PMOS) for the ANY and ALL elements can be varied to provide the device as having a desired NAND, NOR or OR configuration, in which the ANY element acts as a pull-up and the ALL element act as pull-down, or vice versa.
Patent

Architecture having diamond shaped or parallelogram shaped cells

TL;DR: In this paper, a tri-directional three-layer metal routing is proposed for hexagonal-shaped cells, where the conductors for interconnecting terminals of microelectronic cells of an integrated circuit are preferrably formed in three different layers.
Patent

Hexagonal DRAM array

TL;DR: In this article, a tri-directional three-layer metal routing is proposed for hexagonal-shaped cells, where the conductors for interconnecting terminals of microelectronic cells of an integrated circuit are preferrably formed in three different layers.