V
Valeriy B. Kudryavtsev
Researcher at LSI Corporation
Publications - 18
Citations - 835
Valeriy B. Kudryavtsev is an academic researcher from LSI Corporation. The author has contributed to research in topics: Integrated circuit & Transistor. The author has an hindex of 12, co-authored 18 publications receiving 835 citations.
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Patent
Hexagonal field programmable gate array architecture
Michael D. Rostoker,James S. Koford,Ranko Scepanovic,Edwin R. Jones,Gobi R. Padmanahben,Ashok K. Kapoor,Valeriy B. Kudryavtsev,Alexander E. Andreev,Stanislav V. Aleshin,Alexander S. Podkolzin +9 more
TL;DR: In this article, a tri-directional three-layer metal routing is proposed for hexagonal-shaped cells, where the conductors for interconnecting terminals of microelectronic cells of an integrated circuit prefer to be angularly displaced from each other.
Patent
Transistors having dynamically adjustable characteristics
Michael D. Rostoker,James S. Koford,Ranko Scepanovic,Edwin R. Jones,Gobi R. Padmanahben,Ashook K. Kapoor,Valeriy B. Kudryavtsev,Alexander E. Andreev,Stanislav V. Aleshin,Alexander S. Podkolzin +9 more
TL;DR: In this paper, a tri-directional three-layer metal routing is proposed for hexagonal-shaped cells, where the conductors for interconnecting terminals of microelectronic cells of an integrated circuit are preferrably formed in three different layers.
Patent
Microelectronic integrated circuit including triangular CMOS "nand" gate device
Michael D. Rostoker,James S. Koford,Ranko Scepanovic,Edwin R. Jones,Gobi R. Padmanahben,Ashok K. Kapoor,Valeriy B. Kudryavtsev,Alexander E. Andreev,Stanislav V. Aleshin,Alexander S. Podkolzin +9 more
TL;DR: In this paper, the power supply connections and the selection of conductivity type (NMOS or PMOS) for the ANY and ALL elements can be varied to provide the device as having a desired NAND, NOR or OR configuration, in which the ANY element acts as a pull-up and the ALL element act as pull-down, or vice versa.
Patent
Architecture having diamond shaped or parallelogram shaped cells
Michael D. Rostoker,James S. Koford,Ranko Scepanovic,Edwin R. Jones,Gobi R. Padmanahben,Ashok K. Kapoor,Valeriy B. Kudryavtsev,Alexander E. Andreev,Stanislav V. Aleshin,Alexander S. Podkolzin +9 more
TL;DR: In this paper, a tri-directional three-layer metal routing is proposed for hexagonal-shaped cells, where the conductors for interconnecting terminals of microelectronic cells of an integrated circuit are preferrably formed in three different layers.
Patent
Hexagonal DRAM array
Michael D. Rostoker,James S. Koford,Ranko Scepanovic,Edwin R. Jones,Gobi R. Padmanahben,Ashok K. Kapoor,Valeriy B. Kudryavtsev,Alexander E. Andreev,Stanislav V. Aleshin,Alexander S. Podkolzin +9 more
TL;DR: In this article, a tri-directional three-layer metal routing is proposed for hexagonal-shaped cells, where the conductors for interconnecting terminals of microelectronic cells of an integrated circuit are preferrably formed in three different layers.